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In this paper, we report the development of a novel Pt/MoO3 nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO3 nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO3 by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation...
Based on a diode coupled silicon carbide field effect transistor with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of GasFETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, is applied for the first time with gas sensors based on the field effect. A suitable T-cycle for detection of typical exhaust...
In this paper, a comparative study of 1200V Silicon IGBTs with Silicon Carbide (SiC) MOSFETs is presented for a 6kVA single-phase 230V online Uninterruptible Power Supply (UPS) system. The UPS is first tested with the 1200V silicon IGBT/Diode devices (2 parallel 34A IGBT/diode) and then the inverter devices are replaced by next generation SiC 1200V MOSFET/Diode devices (2 parallel 20A MOSFET/10A Diode...
Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.
A novel CNT/SiC/epoxy composite was proposed and demonstrated as adhesive joining element and heat dissipation media for HB-LEDs. Junction temperature, luminous intensity and forward voltage were measured for varied combinations in the composites. The experimental results showed that the epoxy with 30 wt% of SiC and 5 wt% of MWCNTs had the best thermal properties. Comparing to commercial epoxy, the...
An improved 4H-SiC MESFETs with varied p-buffer layer thickness is proposed, and the static and dynamic electrical performances are analyzed in this paper. The variation in p-buffer layer depth leads to the change in the active channel thickness and modulates the electric field distribution inside the channel. Detailed numerical simulations demonstrate that the saturation drain current and the maximum...
Two topics are introduced from our studies on the formation mechanisms of nanochannels: thermal silicon oxidation to form silicon wire channels, and silicon-carbide thermal decomposition to form atomically thin graphene channels. Silicon emission and oxide viscous flow processes are necessary to explain thermal oxidation to form silicon nanochannels. Interfacial growth should be considered for the...
Cubic silicon carbide (3C-SiC) has received a great deal of attention since it is a suitable material for electronic and MEMS devices operating in harsh environments. But difficulties still exist in realizing high throughput of high quality material. In the present paper, 3C-SiC layers have been grown on Si(111) in a vertical multi-wafer WCVD (Warm-wall Chemical Vapor Deposition) reactor with a rotating...
A novel structure of 4H-SiC MESFETs is proposed which focuses on surface trap suppression. A MOS gate controlled spacer layer is shown to improve both DC and AC characteristics due to suppressed surface effect and decreased gate capacitance. A very high power density of 6.1 W/mm is obtained at S band operation. Compare with the well recognized buried gate structure, there is a significant improvement...
Over the last years, more and more SiC power semiconductor switches became available in low production volumes in order to prove their superior behavior with respect to fast switching speed, low on-resistance per chip area, high voltage range and high temperature operation. A very promising device among those introduced in numerous publications over the last years is the 1200 V 30 A JFET introduced...
Three types of defects, namely comet I, comet II and carrot, in thick 4H-SiC homoepilayer were investigated by the micro-Raman scattering measurements. Comet defects were originated from certain cores which caused by the point defects or the inclusions on the surface of the substrate. 3C-SiC inclusions, which were not contained in carrot, were found in comet defects. The different distribution of...
This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on 3C-SiC thin film of operation in harsh environments. Sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating...
The present work reports on the continuous abrasives wear behaviour of Al-SiCp composites with 5 to 30 wt. % of SiC particulates. A pin-on-drum wear-testing machine was designed and fabricated to study the effects of wt. % of SiCp, load, relative velocity and abrasive particle characteristics on abrasive wear behaviour of Al-SiCp composite with 5 to 30 wt. % of SiCp. The 6040Al-SiCp composite samples...
The work hardening behaviour of cold upsetting of Cu-5%SiC powder preforms have been compacted and sintered from electrolytic copper powder is presented here. Cu-SiC Powder Metallurgy preforms having initial theoretical density of 85%, with four initial aspect ratios, namely 0.40, 0.50, 0.60 and 0.70 were prepared using a suitable die-set assembly on a 1.0MN UTM. Sintering operation was carried in...
We report for the first time on the use of PECVD SiC-SiO2-SiC horizontal slot waveguides as optical sensors. The propagation losses are measured and found to be 23.9 dB/cm for the quasi-TM mode. To assess the potential of such devices as sensors we first simulated the confinement in the slot. It shows a sharp drop that can be advantageously used for sensing. The power in the slot measured for different...
Generic PD (Partial discharge) resistance characteristics of polymer nanocomposites are discussed mainly on thermosetting epoxy nanocomposites containing silica, alumina, titania, silicon carbide and layered silicate nano fillers. Generic PD erosion process comprises a process of erosion of epoxy to be impeded by nano fillers and interfaces. It is stressed that only epoxy regions can be eroded. Three-dimensional...
This paper formulated the interface optical phonon modes for two particular asymmetrical heterostructures: SiC/GaN/Vacuum and AIN/GaN/Vacuum. The interface optical phonon potentials and dispersion relations are determined for these structures. Using these results, the carrier-interface-phonon interaction Hamiltonian is formulated.
This work presents the properties of nanocrystalline SiC(nc-SiC) films prepared by plasma enhanced chemical vapour deposition. A p-type silicon wafer with resistivity 2-7 Ωcm and (100) orientation was used as the substrate for the nc-SiC:H films. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was...
The paper gives short overview of SiC based complementary multi guard ring JSB structures and the numerical model to be used in the analysis. The static U-I characteristics are under investigation. The geometry and temperature influence has been analyzed.
The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique...
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