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2.5D integration requires vertical stacking of dies while forming permanent electrical and mechanical connections between the input/output pins of the devices. Through silicon via (TSV) is one of the key elements for 2.5D integration. This paper presents a full process integration solution for interposer with 10×100μm copper filled TSVs, which involves TSV etch, TSV insulation, barrier and seed layer...
The demand for high performance systems is rising. Whether to look at the high resolution and color depth requirements of upcoming display generations, high bandwidth network communication, or at high performance computing in general, to need to transfer data as fast as possible inside a system is crucial. A crucial aspect is the memory/processor interface, which faces multiple challenges such as...
Organic based materials and devices for flexible electronics have many disadvantages such as low charge transport, process temperature limitation, and etc. Those limitations, based on material itself, make the flexible electronic device difficult to compete with Si-based hard electronics that have excellent electric properties and much advanced design rule. Thus, as an effort to overcome the known...
A microchip integration technology called Quilt Packaging (QP) enables rapid prototyping of complex SoCs and microwave/RF systems, as well as optical, power, and DSP applications. QP is a direct edge-to-edge chip-level interconnect technology that can be implemented in a variety of materials and/or process technologies, and has been demonstrated in both planar and non-planar 3D architectures. Quilt...
Fan-out Wafer Level Packaging (FOWLP) is one of the latest packaging trends in microelectronics. For FOWLP known good bare dies are embedded into mold compound forming a reconfigured wafer. A thin film redistribution layer is applied on the reconfigured wafer routes the die pads to the space around the die on the mold compound (fan-out). After solder ball placement and package singulation by dicing...
Smart ICT (Information and Communication Technology) such as "Big Data", "Cloud computing" and Smart Functionalities such as Stand-alone Self-activating MEMS/Sensors construct Smart Systems which enable IoT (Internet of Things), IoE (Internet of Everything) thus Smart Society. To realize above-mentioned Smart Technologies, high-density, low-power consumption, wide-bandwidth, fast-operation...
This paper presents the modular extension of a BiCMOS technology. Three different modules, namely RF-MEMS switch, through-silicon-via (TSV) and microfluidics, are added to HHP's BiCMOS technologies. The first extension module of RF-MEMS switch adds a high-performance mechanical switch, providing unique features such as low-loss switching or high-Q tuning at mm-wave frequencies. The TSV module, which...
Advancements in packaging technologies are required to meet the future bandwidth, and space- and energy- efficient demands of ICT systems. One of the key technologies is 2.5D packaging using a silicon interposer with through silicon vias (TSVs). However, forming the TSV and thinning the wafer makes the Si interposer's cost high. Furthermore, using an organic substrate causes high electrical losses...
The electrical characteristics of silicon and glass interposer channel are heavily affected by the design of through silicon via (TSV) and through glass via (TGV). In this paper, we analyzed the overall signal integrity of glass and silicon interposer channel including through package via. To compare electrical property between silicon and glass, we simulated these channels in frequency-domain and...
In recent years, tremendous research and attention have been focused on 2.5D/3D IC (integrated circuit) integration within a TSI (Through Silicon Interposer) package. Integration of multiple ICs with the use of TSI technology could bring about higher integration density, shorter interconnection path and smaller device structure for the next-generation semiconductor devices. In this paper, we investigated...
Fan-out wafer-level-packaging (FO-WLP) technology gets more and more significant attention with its advantages of small form factor, higher I/O density, cost effective and high performance for wide range application. However, wafer warpage is still one critical issue which is needed to be addressed for successful subsequent processes for FO-WLP packaging. In this study, methodology to reduce wafer...
The electrical characteristics of Through Silicon Via (TSV) have been frequently studied recently, but most studies focused on the single-ended TSV structure. Specially, study about the differential TSV structure is rather limited. In this study, three-dimensional electromagnetic simulation software HFSS was used to analyze the transmission characteristics of the differential signal of the differential...
Characterization of interposer in a 2.5-D stacked IC is essential for yield learning and design optimization. To examine the effect of design parameters of the interposer structure on different substrate materials, the S11 and S21 curves for various substrate materials are obtained from the full-wave simulation. With the simulation results, it is observed that polyimide and glass interposer shows...
An equivalent circuit model of through silicon via considering the eddy current flow inside the silicon is proposed to predict the electrical performance up to 100GHz. The parasitic elements of the proposed circuit model are derived by the structural dimensions and material properties of the TSV, and its electrical performance of the proposed equivalent circuit model is analyzed with structure size...
To overcome the severe challenges of achieving an extra-thin thickness down to 10 μm for chip stacking of 3D-IC module such as the mechanical damages appear at chip grinding, subsequent steps of wafer handling, and robust assembly, a novel pre-molding technology applied to assembled stacked module prior to chip thinning procedure is presented in this study. Packaging vehicle is fabricated to demonstrate...
This paper presents detailed characterization of a representative 10 kV SiC MOSFET module of the type recently developed for shipboard power applications; these modules have not been exhaustively described in the literature to-date. The characterization data presented includes forward curves, transfer curves, and capacitance-voltage (CV) curves, as well as estimates of packaging parasitic impedances...
This paper presents the development of fiber arrays of single-mode fibers, describing the fabrication process of the silicon V-Grooves, fiber assembly procedures, the mechanical polishing process and physical/optical characterization. The optical coupling was evaluated for grating couplers @ 1550 nm fabricated in silicon ICs. The comparison with commercial fiber array is also reported.
Several kinds of micro-electro-mechanical systems are sensitive to pressure. Some need to interface to ambient condition in order to aim intended function, but others claim hermetic packages to keep the constant internal pressure over MEMS devices operation time [1][2]. This study presents the novel method to control the pressure level of different chambers fabricated using the same wafer-level-packaging...
The mechanical strength of the thin dies especially with copper through-silicon via (Cu-TSV), has to be determined for ensuring good yield during manufacture handling and packaging. In this study, three test methods: a line-load on elastic-foundation (LoEF) test, a 3-point bending (3PB) test and a 4-point bending (4PB) test are used for the strength determination of Cu-TSV thin memory dies. The results...
The advancement of silicon scaling to 14/16 nanometer (nm) in support of higher performance, higher bandwidth and lower power consumption in portable and mobile devices is pushing the boundaries of emerging packaging technologies to smaller fan-out packaging designs with finer line/spacing as well as improved electrical performance and passive embedded technology capabilities. Advanced embedded Wafer...
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