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We theoretically analyze the optical loss in multimode waveguide based optical links including optical path conversion via a 45-degree mirror using a ray-trace simulator. We demonstrate a benefit of GI circular-core waveguides over the conventional SI square-core waveguide.
This study experimental demonstrated the plasmonic effects of Al-, In-, and Ag-nanoparticles (NPs) depositing on the silicon solar cells, respectively, according to external quantum efficiency and photovoltaic current-voltage. Efficiency enhancement of 22.68%, 20.88% and 17.10% for the cell with In-, Al- and Ag-NPs was obtained, compared to the reference cell.
We have fabricated a junction of a Si waveguide to plasmonic waveguide supporting the second plasmon mode as a first step to realize high density integrated optical circuit. We successfully excited the second plasmonic mode by using Si waveguide and evaluated that the coupling efficiency is about 7.5%.
The optical generation rate and surface recombination velocity (SRV) increasing with the created nano-holes depth, width, and number on the emitter layer of a thin-film silicon solar cell are studied. The trade-off between the optical generation rate and surface recombination velocity was exhibit in short-circuit current density (Jsc), Open-circuit voltage (Voc), and conversion efficiency (η) using...
In this work, we present a curl-curl formulation for computing the electromagnetic modes that propagate in a waveguide, fully or partially made with magneto-optic material. Such medium is characterized by a nonreciprocal permittivity tensor, which is responsible for a different propagation constant for the forward and backward traveling modes. By exploiting this property, an optical integrated isolator...
We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Silicon DFB laser. Transmission experiments using 1km of standard single mode fiber were also performed and gave a 4.3 dB penalty at a bitrate of 25 Gb/s.
We report 100-Gb/s DP-QPSK pICR module that employs a Si photonics chip with polarization beam splitters. We achieved a Q-value of 12 dB at signal input power of −10 dBm with optical signal to noise ratio of 18 dB.
We demonstrate the proof-of-concept of Ge mid-infrared integrated photonics on Ge-on-insulator (GOI) wafer. Ge rib waveguides enable sharp bend at 2-μm wavelength band. The intensity modulation based on free-carrier absorption in Ge is also demonstrated by carrier injection.
We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer...
We realized on-chip silica microspheres, featuring excellent thermal coupling to the silicon-wafer. These chip-based microspheres can overcome the problem of thermal bistability and are especially suitable for optomechanical studies in vacuum or at low temperature.
We suggest a novel hybrid nanoantenna, consisting of a gold nanorod and a silicon nanodisk, which provides giant enhancement of directional emission together with high radiation efficiency. We demonstrate its fabrication by two-step electron-beam lithography.
We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 μm with a SMSR of 33 dB and a low threshold.
A new fabrication technique for ultra-thin, flexible and optically tunable terahertz metamaterials with embedded silicon is presented. The implemented bandpass filter had a subwavelength thickness of 25 μm and provided a quasi-etalon free maximal amplitude transmission of 80 %. By optical tuning with a 500 mW strong modulation laser an amplitude modulation depth of 94 % was achieved at 0.65 THz.
Fabrication and characterization of optical leaky wave antennas with dielectric waveguides and semiconductor perturbations is presented. Directive radiation at 1550nm is measured. Detailed study on electrical modulation capability with bandwidth exceeding 75GHz is presented.
We demonstrate a scalable array of end-firing silicon waveguides as a platform for high-speed, high-power operation beam-steering applications. We fabricate devices, culminating in 16×1 arrays with a measured central lobe FWHM of 7°±0.6°.
A 1 μm-long hybrid Si-VO2 electroabsorption switch with integrated electrical contacts is demonstrated. A record extinction ratio of ∼12 dB/μm is achieved over a bandwidth of ∼100 nm with a power dissipation of 2.55 mW.
We demonstrate 30 GHz mode-locked quantum well lasers on silicon using continuous-wave optical injection, which emit at the L-band wavelength with integrated root-mean-square time jitter of 1.0 ps and radio-frequency-linewidth of 150 kHz.
We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 64 Gb/s QPSK modulation is achieved with an EVM of 24.4% and power consumption of 7.1 pJ/bit.
We present the design, fabrication and characterization of cubic (3C) silicon carbide microdisk resonators with high quality factor modes at visible and near infrared wavelengths which couple to the intrinsic luminescence in silicon carbide.
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