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We observed the nonlinear electron dynamics in polycrystalline gold (Au) thin films via intense terahertz spectroscopy. Under the intense terahertz wave illumination, the transmittance of Au thin film decreases, indicating that the damping constant of electrons becomes smaller due to the suppression of the grain-boundary effect on electrons induced by the intense terahertz field.
The unwanted photoacoustic pressure force in photoexpansion spectroscopy, which comes from light absorption of the sample not below the AFM tip, was suppressed at the heterodyne frequency of laser pulses and piezo-driven cantilever oscillation.
The combination of nano/micro technology, biology and metal oxides materials have seen great advances in the development of transducers and biochips for biological and medical fields. In this work, TiO2 nanoparticles thin films were prepared using sol-gel method and annealed at 400°C to promote nanoparticles crystallization in anatase phase. The influence of surface topologies and uniformity distribution...
This work aims to study the reliability of the Si film thickness extraction method based on the capacitance derivative analysis in p-i-n gated diodes. Results provided by the derivative procedure are compared to the basic capacitance method (without the derivative). The basic method yields accurate Si-film thicknesses, but it can only be applied to relatively thick body devices where the supercoupling...
In this work, we investigate the impact of varying silicon-body thickness, Tsi i.e 5 nm, 7 nm, 10 nm and 12 nm on the digital figures-of-merit performance of Ultra-Thin Body and Buried Oxide (UTBB) SOI MOSFETs of 10 nm gate length with different ground plane (GP) structures under the double-gate (DG) operation-mode. We show that degradations of the digital characteristics i.e DIBL, subthreshold-slope...
Molecular alignment behavior of pentacene molecules sublimed on photoreactive liquid-crystalline polymer (PLCP) layer that are work as a photoalignment layer were explored. Pentacene molecule aligned perpendicular to the director of PLCP with edge-on to the substrate while pentacene on surface region of the bilayer forms the same structure as pentacene-alone substrate that covered the anisotropic...
This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ∼10 µm long, where the maximum length...
Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized...
The influence of the thermal annealing temperature on the crystallization behaviors of indium gallium zinc oxide (IGZO) thin films was investigated. The IGZO was deposited by rf-magnetron sputtering and the films were annealed by conventional furnace at 400–850 °C for 1hr. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the change in crystallinity occurs at ∼700 °C...
Poly-Si TFTs (Thin Film Transistors) by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT was fabricated with low temperature process below 490°C using BLDA (Blue Multi Laser Diode Annealing) without adopting ion-implantation. In place of impurity doped Si film, Ti of low work-function metal was adopted for source and drain. Hydrogen annealing steps...
Surface charge on insulator polymers in breakers, gas insulated switchgears and other electrical apparatuses, plays a dominant role in the insulation performance of power system. Meanwhile, the surface potential on the functional dielectric can be one of the criteria in the evaluation of the charge storage performance when the dipoles formed in polymer are taken into consideration during corona poling...
CdTe cell efficiencies have increased from 17% to 21% in the past three years and now rival polycrystalline Si [1]. Research is now targeting 25% to displace Si, attain costs less than 40 cents/W, and reach grid parity. Recent efficiency gains have come largely from greater photocurrent. There is still headroom to lower costs and improve performance by increasing open-circuit voltage (Voc) and fill...
In the recent 3 years, power conversion efficiencies in thin-film microcrystalline silicon solar cells were remarkably improved from 10.1% to 11.8%. Front transparent conductive oxide films play an important role in this efficiency improvement. In this study, the impact of the front transparent conductive oxide films were investigated by comparing microcrystalline silicon solar cells with In2O3:Sn...
A microridge-like structure was prepared on the surface of a c-Si substrate with Au hard-masks by reactive ion etching and their application to CIGS photovoltaic devices. Compared to the planar and microridge-like structures. It can be clearly seen that the CIGS films peeled off from the Mo/polishing planar Si substrates. Hence, the microridge-like Si substrate can enhance the adhesion between CIGS...
Wafer level stacking of single crystal films enables 3D monolithic integration of electronic devices. The monolithic stacking technology based on Smart CutTM enables front end integration of large variety of devices with nanometer alignment capability; therefore it provides more degree of freedom for the designers and integration for high density and better performance. Several applications can fully...
We have evaluated characteristic deviation and characteristic degradation of poly-Si thin-film phototransistors. We found that the characteristic deviation is not negligible, which seems due to energy distribution of excimer-laser crystallization, and must be compensated for some applications. We found that the characteristic degradation is negligible, which is convenient for abovementioned applications.
For 3D monolithic integrated (3DMI) technology, the most important task is to fabricate high performance stackable device and prevent damage on underlying device and structure during processes. In this article, we propose a green nanosecond laser crystallization and laser spike anneal process to fabricate 3D stackable ultra-thin body transistors and realize a sequentially layered integrated circuit...
A sample preparation methodology was developed for Four-Point Bending test (4PB) of Cu/Nblk (Nitrogen-doped Barrier for Low-k, SiCN) bi-material in order to overcome interfacial delamination zero yielding issue, possibly caused by the change in carbon content of Nblk film. The methodology involving (i) chemical de-processing (HNO3:BOE mixture) and (ii) film thickness optimization was instrumental...
Recent advancement in chip design which made it possible to achieve more functionality in a smaller package means that the silicon die design needs to be compact and multi layered. One particular case which often caused difficulty to failure analysts was the Common Mode Filter (CMF) devices packed in the multi-leads, XDFN package. The device comes with an integrated ESD protection. Differential signaling...
We report on the design and fabrication of a new type of microtoroid high-Q silica resonators monolithically coupled to on-chip silicon nanowire waveguides. In order to enable monolithic waveguide coupling, the microtoroid geometry is inverted such that the resonator is formed by thermal reflow at the circumference of a hole etched in a suspended SiO2 membrane. This configuration is shown to be conducive...
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