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The promise of improved electrostatics and the ability to increase the amount of effective width (Weff) available in a given device footprint drove the semiconductor industry from planar CMOS transistors to the FinFET transistor starting at the 22 nm node [1]. Numerous manufacturers are in large-scale production of 16 and 14 nm node FinFET technologies [2-3] and there is no indication that a change...
Complex metal oxide (CMO) e.g. Pr1−xCaxMnO3 (PCMO) based resistance random access memories (RRAM) are non-filamentary which leads to forming-less operation, low variability and area scalability of current [1]. However, both CMO and TMO based RRAM show poor nonlinearity. Hence, various nonlinear selector devices (e.g. oxide based selectors [2]) have been explored. Alternatively, selectorless RRAM that...
The possibility of recovering sensible information through the observation of dynamic power consumption of a cryptographic device is a critical issue in security applications. As it has been widely demonstrated in the literature, it is possible to reveal the secret keys of a cryptographic device exploiting the information leaked by the implementation through the power side channel. An on-chip, analog,...
In this paper a Reliability-AwaRE (RARE) method based on the gm/ID-methodology is presented which allows designers of integrated analog circuits to consider process as well as environmental variations and aging effects already at early design stages. The proposed method makes aging simulations on system level superfluous by utilizing a stochastic Look-Up table. The stochastic LUT contains simulated...
In this paper we present a 10-phases programmable clock generator for the application in control of Successive Approximation Register (SAR) Analog-to-Digital Converters (ADC), realized in the CMOS 130 nm technology. The circuit provides 10 clock signals on separate terminals (sections). The programmable feature means that we can program the number of clock phases which are cyclically repeated. The...
Potential advantages of specialized hardware for neuromorphic computing had been recognized several decades ago (see, e.g., Refs. [1, 2]), but the need for it became especially acute recently, due to significant advances of the computational neuroscience and machine learning. The most vivid example is given by the deep learning in convolution neuromorphic networks [3]: the recent dramatic progress...
This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are −8.0 dB and −11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz,...
This paper presents a 124 to 184 GHz single-ended amplifier designed in 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and broadband matching networks for input, output and inter-stage matching employing slow-wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth...
Design and manufacturing process for high-voltage SiC MOSFETs have been developed in a 150mm CMOS fab. 1.2KV MOSFETs have been fabricated on this production line running in parallel with CMOS wafers. Typical devices have state-of-the-art performance with specific on-resistance of 4.5milliohm-cm2 and low leakage current up to 175°C junction temperature. The process manufacturability and quality of...
We are developing artificial retinas using poly-Si thin-film transistors (TFTs), which is suitable for the epiretinal implant on the curved human eyeballs. In this study, we confirmed stimulus performance of poly-Si TFTs in in-vitro experiment for artificial retinas. It is found that correct output waveforms are observed using a CMOS inverter and ring oscillator. This means the stimulus performance...
Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro Transfer Printing. Results of first printing experiments with small...
This paper proposed a novel broadside-coupled meander-line resonator (BCMLR) for millimeter-wave (mm-wave) passive and active circuit designs. This on-chip resonator is designed and fabricated using a 0.13μm SiGe technology. The proposed BCMLR consists of two broadside-coupled meander lines with opposite orientation. Applying this resonator with on-chip capacitors, a compact first-order and a second-order...
Nanopore-based molecular sensing affords a close coupling between DNA sequencing and semiconductor signal processing. This link, in turn, promises to greatly expand genomics applications to health-care and environmental stewardship. As discussed in this paper CMOS technology possesses the ability to process nanopore signals for the purpose of initial data estimation (basecalling) faster by three-decades...
This paper presents a new approach towards the development of a free-breathing micro-spirometer system on a single chip for point-of-care (POC) diagnosis of lung diseases. In this paper, we take the first step by designing and implementing a cantilever array chip using a standard micro-electromechanical system (MEMS) process. Each cantilever beam is incorporated with capacitive electrodes for sensing...
This paper presents a new second-order temperature-compensated current reference which uses only one resistor. The behavior of the proposed bias circuit is analyzed in this paper, and the current reference circuits were designed and simulated in a 130 nm CMOS technology. From the simulation results, the proposed current reference achieved 327 ppm/°C in the temperature range of −30 °C to +150 °C, which...
This paper presents a high wide band power supply rejection ratio (PSRR) current mode bandgap reference (BGR) with a fast startup performance. The BGR includes three main enhancement techniques to improve the PSRR. The proposed design is implemented in 130nm CMOS technology. It only consumes 50μA from a 1.8V supply. The BGR provides 850mV reference voltage and has a power supply rejection ratio (PSRR)...
A zero-crossing based amplifier whose power is scalable to a sampling frequency is presented. An inverter-based zero-crossing detector (ZCD) is proposed to consume no static power consumption compared with a conventional ZCD using a class-A based preamplifier. A common-mode feedback (CMFB) circuit is adopted to calibrate a variation of a ZCD threshold voltage due to supply voltage and temperature...
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