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Low-cost, low-power, and high-sensitivity System-on-Chip (SoC) Hall Effect sensors for 0.18μm and 0.13μm technologies and beyond are developed in this work. A best-inclass current-related sensitivity Si of 418 V/A∗T is achieved by a Hall device with an area of 42 μm × 42 μm. Small offset voltage ranges within +/−1.05 mV, as well as excellent sensor reliability, are demonstrated. The Hall sensors are...
This paper reports a tiny-sized (140μm×140μm) p-Si/Al infrared (IR) thermopile, which is low-cost bulk-micromachined only from the front-side of (111) wafer for IC-foundry compatible manufacturing. With the novel single-side bulk-micromachined structure, the tiny-size MEMS thermopile consists of six single-crystalline (SC) Si/Al thermocouples that show significantly higher Seebeck-coefficient and...
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
The paper presents a piezoresistive absolute micro-pressure sensor for altimetry. This investigation includes the design, fabrication and testing of the sensor. An improved structure is studied through incorporating sensitive beams into the bossed-diaphragm structure. By analyzing the stress distribution of sensitive elements using finite element method (FEM), the configuration shows an enhanced sensitivity...
In this paper, intermediate-sized porous silicon (PS) sensing material was prepared via galvanostatic electrochemical anodization technique in a Teflon double-tank cell configuration. Then, tungsten oxide (WO3) thin films were deposited onto the PS surface by using DC reactive magnetron sputtering method. The morphology of PS and WO3/PS were observed by field emission scanning electron microscope...
In order to prevent the risk of volatile organic solvent over exposure in the atmosphere, a sensitive sensing device is needed for detection in common workplaces. Silicon nanowires carrying the high surface-bulk ratio as a unique characteristic could be used for volatile organic solvent sensing. This study proposed to create the sensing device through spontaneous electrochemical reaction. In terms...
Heated atomic force microscope (AFM) cantilevers can be used to thermally sense the nanotopography of a surface. Previous reports show that cantilever nanotopography sensitivity can be increased by either modifying the cantilever design or by increasing the operating temperature of the cantilever. This article describes six-fold improvement to cantilever sensitivity by using control mechanisms to...
This paper reports the design, fabrication, and testing of a multilayer cantilever structure having a doped silicon heater-thermometer separated from the silicon cantilever legs by a thermally insulating silicon nitride layer. The multilayer microcantilever can be heated above 600??C. Highly sensitive thermal topography measurements were successfully demonstrated on a 20 nm tall silicon grating. The...
We propose a triaxial force measurement cantilever with piezoresistors fabricated by rapid thermal diffusion sidewall-doping. The device is developed as a tool for applying quantitative mechanical stimuli to cells and measuring their mechanical properties at the same time. The device consists of a sensing tip, two sensing beams, and four wiring beams. We form piezoresistors on the surface of the sensing...
The functionality of interdigitated gold/aluminum electrodes on PdO films for water vapor (WV) sensing was studied. The characterization of the structure Au/Al/PdO/Al/Au was done at different temperatures introducing WV pulses in the test chamber under a continuous flow of N2 to produce the desired moisture conditions. PdO films were obtained by thermal oxidation of Pd films at 650??C in air atmosphere...
In this work we present an experimental study of the electromechanical behavior of suspended, taut, single walled carbon nanotubes (SWCNTs). A novel top-down fabrication process was developed in order to integrate the suspended SWCNTs into silicon MEMS structures fabricated using conventional micro-machining techniques. The resonant response of suspended SWCNTs under a time-varying electric field...
In this paper, a very simple micro vacuum pirani gauge made of single crystal silicon is presented. It was fabricated by standard bulk micromachining with only three masks. The high aspect ratio structure of the pirani gauge has large efficient gaseous heat transfer area, thus can increase the sensitivity of the pirani gauge. The dynamic range of the pirani gauge is 2 Pa to 400 Pa which should be...
This paper introduces a class of single crystal silicon micro-scale differential scanning calorimeters for rapid detection and thermal characterization of energetic materials. The suspended membrane micro hotplates have fast time response and high sensitivity, which enables thermal measurements of melting endotherms and deflagration exotherms in energetic materials such as RDX and TNT. The potential...
This paper presents a method to calibrate arbitrarily shaped planar Hall plates without the need for applying a magnetic field. Using the method of conformal mapping, it is shown that magnetic sensitivity parameters can be extracted from six independent resistance values measurable in the absence of a perpendicular magnetic field Bperp. Remarkably, no prior knowledge of the device geometry is required...
In this work, we demonstrate a novel SU8/SiO2 /PMMA trilayer nanoimprint technique to fabricate the silicon nanowire (SiNW) sensor used for gas detection. The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 times 1017 cm-3. Two nanowire sensors with different linewidths as well as a thin-film plane...
Novel fabrication methods are investigated to enhance the sensitivity of resistive probes. In this paper, two new silicon resistive probes are presented by using two-dimensional device simulation (SILVACO??). Enhancement probe and I-MOS probe are formed by using anisotropic etch and mask transcription process. Due to novel structures, the sensitivity of resistive probes is increased dramatically.
The dramatic increase in leakage current, coupled with the swell in process variability in nano-scaled CMOS technologies, has become a major issue for future IC design. Moreover, due to the spread of leakage power values, leakage variability cannot be neglected anymore. In this work an accurate analytic estimation and modeling methodology has been developed for logic gates leakage under statistical...
This paper presents the effect of temperature to strain gauge resistance, sensitivity, and hysteresis of surface micromachining pressure sensor with polysilicon membrane and polysilicon resistor as piezoresistive strain gauge. The resistance value is nominally 2.7 k Omega, under normal atmospheric pressure and room temperature. The experiments measured the relationship between resistance of strain...
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