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In this paper, the pumping behaviors of copper filler from TSV were systematically investigated. First, in-situ observation of copper pumping from TSV was conducted in scanning electronic microscope (SEM), the pumping height of copper filler and its evolution with time and temperature was recorded, it is found that the pumping rate increase with temperature and the maximum pumping height reached 12...
A thin copper layer is an integral part of a Through-Silicon via (TSV) structure. The copper layer experiences mechanical stressing through the temperature excursion, thus raising reliability concern of the component. Such reliability assessment calls for the determination of the mechanical properties of the thin layer. In this respect, this paper discusses the experimental study to establish the...
The influence of copper pumping on through-silicon vias (TSVs) under thermal loading was investigated using an in situ experimental technique. The morphology of the TSV and its evolution with temperature were observed by scanning electric microscopy, and the process of copper pumping and its damage to the integrity of the TSV were recorded. Some new failure modes were found. The maximum height of...
Most TSVs filled with plated copper offer many reliability problems. When subjected to thermal-cycled plating processes, the very large CTE (coefficient of thermal expansion) mismatch between the copper and the silicon/dielectric generates enormous interfacial thermal stress. In addition, the incoherency of differently grown copper grains plated under various processing conditions produces significant...
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