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This paper presents an evaluation of a newly released power stage direct drive GaN HEMT. The double pulse test is performed and the dynamic performance is characterized. PCB layout optimization is also investigated for improved switching transients. It is shown that the direct drive system provides simplified circuit design, reduced number of external components, and small gate loop parasitics. Also,...
In this paper, we present a comprehensive evaluation of the latest 600 V class Gallium Nitride based Gate Injection Transistor (GaN-GIT) for high temperature and high efficiency applications. In this study, the Panasonic GITs are used as the reference for latest GaN-GIT technology. Static and dynamic testing was performed on the two GaN-GIT versions to extract critical static parameters and switching...
This paper presents elaborate evaluation of 600V/650V enhancement mode gallium nitride (GaN) devices. The switching loss mechanism and the impact of package and driving circuit parameters are illustrated in detail. The hard-switching turn-on loss is dominant due to junction capacitor charge of the freewheeling switch. The turn-off loss is much smaller and it can be further improved by driving circuit...
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