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The electrical properties of single Cd_{1 - x}Mn_{x}Te (x= 0.07 - 0.39) crystals with a resistivity of ≈ 10^8 Ω cm at 300 K have been studied. The electrical conductivity is explained in the terms of statistics of electrons and holes in a semiconductor taking into account the compensation process in impurity-defect complexes. The energy of ionization and the degree of compensation levels have been...
The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and Zn_{1-x}Mn_{x}O of different thickness were obtained on Al_{2}O_{3}, glass, and KCl substrates in vacuum of 1 × 10^{-5} Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of...
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