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The paper considers a new electric diagram of the microelectronic self-excited oscillator based on the bipolar transistor structure with negative resistance. The oscillator operates in oscillatory and relaxation modes. Chaotic mode of the self-excited oscillator was provided by installing additional components into a basic circuit. Results of the deterministic chaos microelectronic oscillator simulation...
Spin torque oscillators (STO) have drawn significant attention from the research community as potential replacements for electrical oscillators due to their simple and compact structure.
In the paper a deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance is proposed and examined. A modified mathematical model of Anishchenko-Astakhov is proposed for describing the chaotic oscillation dynamics. The results of mathematical modelling and experimental research are obtained.
Considering simulations of electromagnetic transients and searching for better results, it is investigated the limits of the change of the representation of the longitudinal parameters in the model of infinitesimal unit of transmission lines' model. It is introduced a damping resistance in parallel to the impedance that represents the longitudinal parameters of transmission lines. Several simulations...
Actively simulated grounded floating capacitance multipliers have been used in several applications ranging from filter to oscillator design as well as cancellation of parasitic capacitances. In this paper, a new electronically-controllable floating lossless capacitance multiplier (C-Multiplier) circuit is presented, which employs only one Voltage Differencing Current Conveyor (VDCC), one grounded...
This paper studies the influence of different implementation methods of a simple control algorithm over the chaotic behavior of a specified circuit. Two new methods are presented: one is using a microcontroller and the other is using logical gates. The article also presents a unique approach to modelling a negative resistance as simple as possible, closely resembling a proposed mathematical dependency.
We report a SPICE compatible closed form compact memristor model, for the temporal evolution of resistance in a memristor under the action of a programming voltage. This compact model compares well to published transition time formulae and known memristor behavior. We use the SPICE equivalent of the model in a novel Wien-Bridge oscillator signal conditioning circuit application.
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