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An overview on the recent progress of Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs as key components in today's power electronic system is given. The state-of-the-art device concepts are explained as well as an outlook about ongoing and foreseeable development steps are shown.
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments for improving the interface quality resulting in a lower channel resistance are reviewed as well as solutions for lowering the JFET and bulk resistance components. The 3rd quadrant operation, short-circuit...
This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage, the mobility and the access resistances. Then, the approach of low frequency noise study is presented as a non-destructive diagnostic tool to identify...
The paper presents an original approach of designing analog signal processing circuits, based on the re-using of the same functional core for implementing a multitude of circuit functions: signal gain with theoretical null distortions, signal squaring, voltage multiplying with very good linearity and simulation of a perfect linear resistor with both positive and negative equivalent resistance. The...
To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10−7 μA/μm), high Ion/Ioff ratio (> 107), low operating bias (< 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 104. Furthermore,...
For high power applications, power modules provide a higher power density than using discrete power devices due to improved thermal performance as well as compact form factor. Since all semiconductor failure and degradation is related to the temperature rise in semiconductor devices, accurate temperature monitoring is necessary and are considered necessary in future generations of wide bandgap power...
This paper deals with the design of a DC/DC boost converter aimed at Fuel Cell Vehicle (FCV) application. In order to extend the FC lifespan and to increase the reliability, efficiency and power density, a DC/DC boost converter should be designed with the following features: low current ripple, low weight, low volume, and high redundancy. In this study, a 6-phase Interleaved Boost Converter (IBC)...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction...
From small voltage regulators to large motor drives, power electronics play a very important role in present day technology. The power electronics market is currently dominated by silicon based devices. However due to inherent limitations of silicon material they are approaching thermal limit in terms of high power and high temperature operation. Performance can only be improved with the development...
A new 60 V rating split gate trench MOSFET fabricated with the state-of-the-art process technology has been investigated and evaluated in the secondary synchronous rectifier board. It shows the best-in-class specific resistance of 10.9 mΩ·mm2 and the figure-of-merit (FOM) of 85 mΩ·nC which is the product of the on-resistance and the gate charge.
This work presents a piecewise model to predict electrical waveforms of SuperJunction Cascode Configurations (SJ-CCs) during hard-switching operation. This ultra-fast high-voltage switch is composed of a SuperJunction MOSFET (SJ-FET) in Cascode Configuration (CC) with a Low-Voltage silicon MOSFET (LV-FET). SJ-CCs have been recently proposed as the first solution fully-based on silicon technologies...
Overtemperature occurring in silicon solar panels subject to partial shadowing are reduced by means of a new bypass circuit. The circuit exploits a series connected power MOSFET which sustains part of the reverse voltage developing across the shaded solar cell. Neither power supply nor control logic are required, resulting in an appealing advantage with respect the other active bypass circuits. Experiments...
III-V materials are an attractive option for next generation MOSFET devices, essentially thanks to their excellent transport properties. The aim of this work is to benchmark the performance of III-V MOSFET technology (considering In0.53Ga0.47As as the channel material), using the MASTAR [1] platform which includes tunneling effects, mobility physical models, ballistic transport, band-structure modification,...
Switching devices such as Silicon Carbide (SiC) MOSFET present significant performance improvement in high frequency switching power converter applications. This paper presents a gate charge profile investigation of a Silicon Carbide MOSFET and gate driver circuit solutions to optimize both switching speed, power losses and EMI requirements. Main technology issues of Silicon carbide MOSFET are presented...
A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I–V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I–V characteristics...
Since Cree, Inc.'s 2nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission...
We propose a new laser annealing process for forming P-Base-Junction P-Base-Junction (Here, P represents the type of impurity) in the trench gate power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor). An equivalent shallow junction structure for P-Base-Junctionwith uniform impurity distribution is achieved by the green laser annealing process of pulse mode. By comparing the laser annealing...
The paper proposes a single end Flyback design with Silicon Carbide (SiC) based 1700V MOSFET to replace conventional two-switch Flyback converter. An active start-up circuit with 1700V SiC MOSFET is implemented to optimize the converter design with wide input voltage from 200Vdc to 1000Vdc and lower power losses. A 60W auxiliary power supply is developed to demonstrate higher performance and less...
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