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ReRAM (Resistive Random Access Memory) is an emerging non-volatile memory technology that exhibits high cell density and low standby power. ReRAM crossbars, while having the smallest 4F2 cell size, suffer from large sneak leakage, which not only wastes dynamic energy but also degrades system performance significantly. In this paper, we propose V-ReRAM, a novel ReRAM crossbar design based on 1TnR cell...
Emerging Resistive Memory (ReRAM) is a promising candidate as the replacement for DRAM because of its low power consumption, high density and high endurance. Due to the unique crossbar structure, ReRAM can be constructed with a very high density. However, ReRAM's crossbar structure causes an IR drop problem which results in non-uniform access latency in ReRAM banks and reduces its reliability. Besides,...
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