The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Downsizing the Cu signal traces in the redistribution layer is an effective approach to increasing the number of signal I/O lines and thereby greatly increasing signal processing performance between logic and memory chips in advanced fine-pitch packaging. Downsized Cu traces, however, are vulnerable to current stress, which degrades electromigration resistance. This is a serious problem in advanced...
This paper reports on a large-size CPU package for UNIX servers which employs embedded thin film capacitor layers. The substrate of this package has two thin film capacitor layers in the surface of the core layer, which has a capacitance of 25 uF in total. In order to adopt this package substrate, we confirmed the effect of the thin film capacitor layers on the package assembly process. We actually...
This paper proposes an Active Thermal Control (ATC) method for MOS-gated power switches aimed at reducing temperature swing amplitude during operation. It leverages on the fact that thermal cycle amplitude of many actuation system components (such as power devices) has a large impact on the system reliability and lifetime. These figures can then be improved, which eases the adoption of electrification...
The underlying variability in the ReRAM device operation, while undesired in many applications, can be advantageous for hardware security primitives. ReRAM devices also come with the advantage of having non-linear multi-state operation. By comparison with previous reported ReRAM PUFs, which utilized spatial variations in the devices' binary ON/OFF states, we proposed to use sneak path currents and...
Bonding technology using anisotropic conductive paste shows great promise to achieve the denser integration schemes that are required for the application of high resolution ultrasonic imaging. A design of experiments has been carried out to characterize and optimize a flip-chip bonding technology that utilizes a novel, magnetically aligned anisotropic conductive paste. This optimized process has the...
A digitally controlled LDO in 14nm tri-gate CMOS powering an Atom™ core with embedded power gates enables per-core DVFS over a wide voltage-frequency range. The LDO demonstrates 99.6% peak current efficiency at 2.5A load current and provides a power density of 26.1 W/mm2. The multi-mode digital controller featuring non-linear mode and adaptive gain achieves <20ns settling time with a 100mV droop...
Microultrasound is of increasing interest in medicine due to the real-time, high-resolution images that can be acquired. The resulting low penetration depth of the image requires the use of multiple transducers laid out as an array and their integration into space-constrained form factors such as needles or capsules to enable minimally invasive access to the site of interest. Miniaturisation of the...
The spin transfer torque magnetic random access (STT-MRAM) is suitable for embedded memories and also for the second level cache memory in the mobile CPU's. The most capable NVM component is STT-MRAM, which enhances the performance by 3.3 nS access time. It has strong radiation hardness, higher integrity and maximum endurance compared to SRAM. The power consumption of STT-MRAM is decreased by an order...
As the security is becoming more and more important these days, we still should not forget about reliability. When designing a cryptographic device for some mission-critical or another reliability demanding system, we need to make the device not only attack-resistant, but also fault-tolerant. There are many common fault-tolerant digital design techniques, however, it is questionable, how these techniques...
Failure analysis is the process of collecting and analyzing data to determine the cause of a failure, often with the goal of determining corrective actions or liability. Negative Temperature Coefficient (NTC) thermistors, with its advantage such as high accuracy, high sensitivity, high signal to noise ratio and low cost, has been widely used in almost every field like home appliances, manufacturing...
Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. While several solutions exist for classical CMOS devices, novel proposals have been recently presented which exploit emerging technologies like magnetic memories. The Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is a promising...
A binary neural associative memory concept comprising nanoelectronic resistive switches and non-linear selector devices used as binary connection elements is proposed for the realization of logic and arithmetic functions. Based on the consideration of device variability an error detecting 2-out-of-n-code for the representation of operands is developed. The connection structure of an associative memory...
We report the featured field electron emitter of Si tip with individually integrated nano-channel. A rational procedure was developed to fabricate the uniform integrated device. The Si nano-channel can limit both current and heat flow. The heat resistance of the nano-channel resulted in the heat accumulation at the tip apex, inducing the thermally assisted field electron emission. The negative feedback...
The power and reliability issues of today's memories limit the improvements attained by their implementation in scaled technology nodes. Several emergent memory technologies attempt to address the technical constraints of today's memories, amongst which, one of the most promising solutions is the Spin-Transfer-Torque Magnetic Random Access Memories (STT-MRAMs). One of the great advantages of the emerging...
We study secure RAID, i.e., low-complexity schemes to store information in a distributed manner that is resilient to node failures and resistant to node eavesdropping. We describe a technique to shorten the secure EVENODD scheme in [6], which can optimally tolerate 2 node failures and 2 eavesdropping nodes. The shortening technique allows us to obtain secure EVENODD schemes of arbitrary lengths, which...
Nano-wedge structured resistive switching memory is fabricated through modifying bottom electrode structure and the DC characteristics of devices are analyzed. Excellent data storage capability is proved through retention test by setting at high temperature over 104 seconds in both low and high resistance states (LRS and HRS). Endurance test is also performed to demonstrate outstanding characteristics...
In this paper, we propose a novel design of strong Physical Unclonable Function (PUF) leveraging the sneak paths in the resistive cross-point (X-point) array for device authentication. The entanglement of the sneak paths in the X-point array greatly enhances the entropy of the physical system, thereby increasing the space of challenge-response pairs (CRPs). “Digital” resistance distribution in X-point...
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) has been explored as a post-CMOS technology for embedded and data storage applications seeking non-volatility, near-zero standby energy, and high density. Towards attaining these objectives for practical implementations, various techniques to mitigate the specific reliability challenges associated with STT-MRAM elements are surveyed, classified,...
The crossbar resistive random access memory (RRAM) has been studied extensively due to its low-power, low-cost, high density and nonvolatile characteristics. However, the dependence of RRAM performance parameters on temperature, from cell to array level, is less explored. Particularly, thin-film based RRAM that is integrated into 3D ICs is subject to severe thermal conditions. Hence, temperature dependence...
The interest in wearable electronics has been rapidly increasing due to the high demands for various wearable devices such as smart glasses and smart watches which satisfy the needs of today's customers. Future wearable devices will require fully flexible chip packaging performance and also maintain stable electrical performance under repeatedly bending environment. To meet these requirements, ultra-thin...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.