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Currently, solar energy is the primary source of energy for space missions. The development of space systems is affected to many fields: the study of space itself, the science of materials and especially the field of energy. Indeed, solar panels are the only non-nuclear means that enable satellites in orbit to be fed continuously. The efficiency of these solar cells increases. Current triple junction...
We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum dots and as-cleaved facets.
We report theoretical and experimental results on second harmonic generation from individual pillars and dimers monolithic AlGaAs-on-AlOx nanoantennas. We demonstrate peak conversion efficiencies exceeding 10−5 for a 1.6 GW/cm2 pump intensity.
This work investigates, in detail, the electrically gate-all-around (eGAA) Hexagonal NW FET (HexFET) which combines the high current drive of FinFETs with the excellent electrostatic robustness of conventional Gate-All-Around Nanowire (GAA NW) FETs. We evaluate HexFET as a potential successor to FinFET for 5nm node logic and SRAM applications using first principles atomistic-based modeling, calibrated...
3D Finite Element ensemble Monte Carlo simulations with integrated 2D Schrödinger Equation quantum corrections are employed to forecast the performance of scaled Si gate-all-around (GAA) nanowire (NW) FETs with unstrained/strained channel. The results from the 3D MC toolbox were compared against experimental I-V characteristics of a 22 nm gate length GAA NW FET with excellent agreement. The NW FET...
The wetting of nickel films deposited on NaCl (100), Si (111), and GaAs (111) single crystals by island lead condensates has been studied. It has been shown that with an increase of the Ni film thickness the contact angle changes from the value corresponding to the wetting of a clean single-crystal substrate to the wetting of the bulk nickel one. Complete substrates properties damping was achieved...
The main objective of this paper is to increase the power conversion efficiency by effective solar spectral band splitting. This is attained here by cascading semiconductor materials of varying energy band gap arranged in the decreasing order. In addition, an efficiency of a multijunction solar cell can be improved by current and lattice constant matching of the cells. Accordingly, a multijunction...
We present an experimental investigation of the nonlinear response of acceptor impurities in semiconductors to coherent excitation with intense THz fields. In Zn-doped GaAs, we observed a well-defined saturation of the transition from the impurity ground state to the excited states and valence band. In B-doped Si, however, there is a clear indication of field-induced distortion of the impurity energy...
From the 1980s, the flip-chip technology has been successfully used for hybridization of Infrared Focal Plane Array (IRFPA), which leads to a high degree of homogeneity of the indium bumps and therefore very high interconnection efficiency. However, the severe application environment and the large array size bring great challenge to the interconnect reliability. Interconnect failure such as cracking...
A self-calibration noniterative technique for determination of the optical constants and thickness of lossless materials using only three reflection measurements is proposed. A generalized model is derived based on the reflection measurements. For validation, two different samples (Si and GaAs samples) are considered for extraction of their optical parameters and thicknesses by using a numerical full...
In this paper, we propose a Si/GaAs based dopingless heterostructure TFET (DHTFET). Instead of using silicon-drain as in conventional dopingless TFET, GaAs is used to replace the drain region. Using charge plasma concept, source and drain regions are obtained on intrinsically doped Si/GaAs body. With the help of 2D simulation study, we report that the proposed Si/GaAs DHTFET exhibits full ambipolar...
We perform experimentally validated statistical device simulation to explore characteristic fluctuation induced by random discrete dopants (RDDs) inside the source / drain extensions of undoped gate-all-around silicon nanowire MOSFETs. The engineering findings of this study indicate that both the DC and dynamic characteristic fluctuation caused by RDDs of the drain extension has relatively smaller...
Monolithically integrated light sources on silicon are key for future semiconductor microchips that comprise Si CMOS and on-chip optical interconnects as prerequisite for more energy efficient computers and data centres. Recently, major advances were achieved regarding direct integration of III-V gain material on silicon without introducing threading dislocations, especially via heteroepitaxy of semiconductor...
Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever increasing demand for more powerful computational systems. Recently, III-V integration on Si attracted significant research interest [1] due to the promise to merge mature Si CMOS processing technology with III-V semiconductors possessing superior material properties e.g. in terms of...
Spectrum Access System (SAS) is a three tier spectrum sharing framework proposed by the FCC. In this framework the aggregate interference of tier-3 General Authorised Access (GAA) users should be below a predetermined threshold anywhere within the tier-2 Priority Access Licensee (PAL) exclusion zone. GAA are expected to use a diverse range of Radio Access Technologies (RATs) with different levels...
The polycrystalline silicon (poly-Si) gate-all-around (GAA) nanowire transistors with 10nm scale width were fabricated under precise width control. The nanowire width is 10nm scale. Measured characteristics show smaller threshold voltage and drain current variability than that of previously reported poly-Si nanowire transistors.
Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional...
Different GaAs//Si wafer bonding approaches are compared in order to fabricate III-V tandem solar cells. Bonding interface characteristics and electrical properties will be discussed for standard and improved direct wafer bonding sequences as well as for covalent bonding technique using SAB.
A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed...
We fabricate InGaP/GaAs/Si hybrid triple-junction (3J) cells with different sheet resistances of bonding layers in Si bottom cells. We estimate resistances across the p-GaAs/n-Si bonding interfaces of the respective 3J cells by measuring the potentials of the bonding layers. We find that the interface resistances are higher in 3J cells with the bonding layers of Si bottom cells with higher sheet resistances.
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