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An easy approach for the fabrication of titanium dioxide hollow spheres is proposed. Nanostructures were obtained by the conventional hard template method with silica-protected calcination. The samples were characterised by differential thermal analysis and thermogravimetry, Brunauer-Emmett-Teller nitrogen adsorption isotherms, X-ray diffraction, scanning and transmission electron microscopy (SEM...
Microcrystallines of bio-upconversion (UC) phosphor NaYF4:Yb3+/Er3+ were prepared by the complex precipitation method and the hydrothermal method in the presence of sodium citrate. The precusor synthesized by the complex precipitation method was annealed at different temperature, and another was hydrothermal treated at different time. The structure, morphology and upconversion fluorescence of the...
A simple process is presented for the preparation of TiO2 nanoparticles by Co-precipitation method. This process is relatively cheaper and by using different variation we can control particle size and shape. TiCl4 was used as primary precursor along with Na2CO3 for synthesis of Rutile nanoparticles. Synthesis was done with and without modifier. Structural characterizations of samples were performed...
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of...
Al-doped ZnO thick films were prepared by sol-gel method, then which were annealed respectively at 500°C, 700°C and 900°C. The structure of these samples was studied by XRD and SEM. Moreover, the influence on gas sensing properties of the films, result from different Aluminum-doped concentration and different annealing temperature, were mainly researched. Results showed...
Pentacene OTFTs with HfLaO or HfO2 as gate dielectric were fabricated. The dielectrics were prepared by sputtering method and then annealed in NH3 at 400 oC. The k value for the HfLaO and HfO2 films amounted to 12.3 and 11.8 respectively. Both of the OTFTs could operate with a supply voltage of -5 V. The mobility of the OTFT with HfLaO gate dielectric was 0.688 cm2/Vs, which was much higher than that...
In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
Titanium Dioxide (TiO2) thin films have been successfully deposited on glass substrate using sol-gel method. The samples were then annealed in a furnace under different oxygen gas flow rate. Current-Voltage (I-V) measurement, SEM, and UV-Vis characterization are done for all samples. SEM images confirm the nanostructured nature of the thin films. The sample with higher oxygen flow rate shows significant...
In this paper, theoretical interaction between semiconductor and metal nanoparticles assembled into superstructures is studied. Silver (Ag) was used to fabricate nanosized metal particles embedded in porous GaAs (π-GaAs). The formation of the porous GaAs layers was illustrated in simple measurement. First, the π-GaAs was obtained using conventional electrochemical etching method which will change...
Bimetals (Na, Mg, Li, Cr) doped nanotitania was prepared using a modified hydrothermal method from a titanium mineral. The samples, along with a commercial sample, were then annealed from 873 K to 1273 K, at 100 K intervals. Both samples were characterized using a variety of methods such as the XRD (crystallite size and phase conversion temperature), SEM (morphology) and BET (surface area). It was...
A Germanium-on-Insulator (GeOI) wafer was fabricated using low temperature direct wafer bonding method. A hydrogen implanted Ge donor wafer was bonded to a thermally oxided Si handle wafer with in-situ oxygen radical activation before bonding in a vacuum chamber. Ex-situ anneals were use to enhance the bond strength or exfoliate the implanted Ge wafer. The insight into the exfoliation mechanism of...
Summary form only given. Commercial expandable graphite was heat at 900 °C to get the worm-like graphene nanosheets. Using sulfuric acid and potassium permanganate to oxidize the expanded graphene nanosheet could further minish the thickness of graphene oxide sheet to less than 1nm, and this way to get the graphene was proved to be mass producible (tens of gram). Free-standing graphene oxide paper...
In this paper we report the results of different experiments for the formation of titanium silicide -silicon interface by furnace annealing. The experiments have been performed with the final aim to implement a robust production process for the formation of titanium silicide Schottky barrier diodes (SBDs). Titanium silicide formation takes place by mean of the diffusion of the silicon atoms across...
Nickel silicide is a common contact material for current generation microelectronic devices. As the technology nodes become smaller, forming the NiSi phase with milli-second or below annealing is an attractive alternative to conventional RTA annealing because of the potential for increased device performance and yield. This paper will discuss the use of a dual beam laser spike annealing (LSA) to form...
Printed electronics have become research focus due to their distinct characteristics such as tiny, flexible, thin, and easy to carry. Printed electronics have shown great potential in daily use, such as RFID tags, smart cards and displays. Silver nanoparticles have been applied as conductors in printed electronics. Different kinds of chemicals are used as solvent and stabilizers to prepare nano silver...
He re we present a simple method to prepare large-scale graphene sponges and free-standing graphene films using a speed vacuum concentrator. During a centrifugal evaporation process, suspended graphene oxide (GO) sheets in an aqueous solution have been assembled to generate network-linked GO sponges or a series of multilayer GO films depending on the temperature of a centrifugal vacuum chamber. While...
In this paper, the sol-gel method was adopted preparation uniform Nano-diamond films on large glass. The mixture of Nano-graphite and organic vehicles doped to nano-diamond paste and further ultrasonic dispersed. Through test a variety different proportion of Nano-diamond paste, Nano-diamond film was prepared by sol-gel method at 3000-7000/min. The special sintering and annealing were taken to improve...
The morphology and optical properties of Zn1-xMnxO films were synthesized by sol gel method using spin coating technique. Zn1-xMnxO thin films is prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution is stabilized by MEA. The quantity of Mn in the sol was varied from x = 0,0.02, 0.04, 0.06 and 0.08 with annealing temperature of 600°C. Investigation...
Multiferroics represent a class of new materials having potential applications for design and preparation of multifunctional material due to the possibility of the coupling of their coexisting electric and magnetic orderings. The magnetic polarization can be switched by applying an electric field; and the electric polarization, by applying a magnetic field. We report here our attempts using three...
Titanium Dioxide (TiO2) thin film has been synthesized using sol-gel method and deposited onto glass substrates using spin coating technique. These thin films are then annealed at various temperatures. The electrical and structural characterizations of the as deposited and annealed films were carried out using IV measurement with 4-point probe equipment and scanning electron microscopy (SEM). From...
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