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We reported the InGaN/GaN multiple quantum well (MQW) blue light-emitting diodes (LED) grown on patterned sapphire substrates (PSS). The surface morphologies for samples grown on the "dome" PSS in different growth stages were observed by scanning electron microscopy (SEM). The fully coalescence of the growth fronts was achieved for 30 minute growth sample with the "bumps" surface...
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of...
The CdS nanowires array were grown by thermal evaporation technique on Au patterned silicon substrate. The SEM and TEM are used to analyze surface morphology as well as crystallinity of the as-synthesized CdS nanowires film. The field emission properties of CdS nanowires array were investigated in a parallel plate diode configuration. A high current density of ~ 68 μA/cm2 has been drawn at the applied...
In this work, polycrystalline zinc nitride films were prepared on Si and glass substrates by rf magnetron sputtering in N2 ambient using Zn as a target. Substrate temperature (Ts) was different for each deposition process ranging from 298 K to 523 K. Optical transmission experiments showed that the optical band gap of the resultant layers decreased as Ts increased. X-ray diffraction scans presented...
Al-doped ZnO thick films were prepared by sol-gel method, then which were annealed respectively at 500°C, 700°C and 900°C. The structure of these samples was studied by XRD and SEM. Moreover, the influence on gas sensing properties of the films, result from different Aluminum-doped concentration and different annealing temperature, were mainly researched. Results showed...
PdPc was synthesized with Phthalonitrile and p-Cresol as the source material of benzene ring by the template synthesis method of two steps reaction. Through doping with perchloric acid, vitriol and nitric acid, semi conducting doped PANI was obtained. By means of molecular hybrid modification, PdPc and doped PANI was polymerized and formed a kind of new organic semiconductor material PdPcxPANI1-x...
In this research, zinc oxide films were prepared on glass substrates by hydrothermal synthesis and metal-organic chemical vapor deposition (MOCVD) respectively. A nanostructured layer of flurocarbon compounds with low surface energy was formed on the films by low-temperature dielectric barrier discharge plasma enhanced chemical vapor deposition (DBD-PECVD), in order to enhance the hydrophobicity of...
Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on quartz substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films...
Pentacene OTFTs with HfLaO or HfO2 as gate dielectric were fabricated. The dielectrics were prepared by sputtering method and then annealed in NH3 at 400 oC. The k value for the HfLaO and HfO2 films amounted to 12.3 and 11.8 respectively. Both of the OTFTs could operate with a supply voltage of -5 V. The mobility of the OTFT with HfLaO gate dielectric was 0.688 cm2/Vs, which was much higher than that...
This paper reports on the electron-beam induced current (EBIC) measurement of minority carrier diffusion length as a function of electron beam acceleration voltage in Si-doped, MOCVD grown, gallium nitride. The measured diffusion length varied from 160nm at 8kV to 220nm at 15kV. Possible reasons for the observed diffusion length dependence on voltage are discussed.
Titanium Dioxide (TiO2) thin films have been successfully deposited on glass substrate using sol-gel method. The samples were then annealed in a furnace under different oxygen gas flow rate. Current-Voltage (I-V) measurement, SEM, and UV-Vis characterization are done for all samples. SEM images confirm the nanostructured nature of the thin films. The sample with higher oxygen flow rate shows significant...
This paper reports on the preparation of nano-structured of MgxZn1-xO thin films by sol-gel spin coating method which will be used as a template layer to grow carbon nanotubes. The MgxZn1-xO films were deposited on Pt/Si (100) substrates. In this work, we focused on the effect of sol aging and Mg content on the film structure and resistivity. Sols with Mg content of x = 0.1, 0.3 and 0.5 were subjected...
Silicon thin film is widely used as transistor. It performance depends on it crystal structure. The larger the crystallization the better the current flow. The goal of this work is to enhance the grain size. In the attempt, an amorphous silicon thin film was prepared by low pressure physical vapour deposition (PVD) and dopant by cooper. The silicon film was heat treated for four hours, using conventional...
The electrically conductive zinc oxide (ZnO) nanostructures prepared by sol-gel spin coating are presented. This project has been focused on electrical, optical and structural properties of Al doped ZnO thin film. The effects of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. This project involves 3 processes which are thin film preparation, deposition...
Mg0.3Zn0.7O with the resistance of 106 Ω/cm, can acts as a semi-insulating material in MESFET structure, was deposited on quartz substrate before being immersed in ZnO solution for 4.5 hours. The ZnO solution of 0.05M was prepared one day earlier, was stirred and heat, before being left at room temperature to get better solubility. This chemical bath deposition technique was believed to be very easy,...
Hexagonal Al doped ZnO nanorod arrays have been prepared via a simple low-temperature sonicated sol-gel immersion method on Al doped ZnO nanoparticle thin film coated glass substrates. The nanorod arrays were annealed at the temperatures between 300 to 500°C in ambient. The properties of the nanorods have been investigated using field-emission microscope (FESEM), X-ray diffractometer (XRD), photoluminescence...
The work presented here shows the effect of annealing temperature on CuI thin films. The 0.05 mol of CuI solution is prepared at room temperature and then deposited in silicon and glass substrate. The CuI thin films were deposited using sol-gel spin coating method. The electrical, optical properties and surface morphology was characterized by current-voltage (I-V) measurement, ultraviolet-visible...
Carbon thin films were deposited on Silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C10H16O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density...
We discuss the effect of scaling of the Ni thickness on the formation and stability of nickel silicide contacts. When scaling the Ni thickness from 15nm down to 5nm, the start of the agglomeration of the resulting NiSi layer is gradually shifted towards lower temperature. The influence of the microstructure of the polycrystalline NiSi layer on the agglomeration behavior, and methods to stabilize the...
This paper presents field electron emission current density of the hydrogen plasma treated nano-ZnO thin films. The surface morphology, microstructure and surface resistance of nano-ZnO thin films deposited on Mo layer are characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS) and surface resistance meter.
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