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The GeSn material system is expected to be a direct bandgap group IV semiconductor at a Sn content of 6.5–12 at.%, depending on the level of residual compressive strain in the alloy films [1]. Such Sn concentrations can only be realized by non-equilibrium preparation techniques since the equilibrium solubility of Sn in Ge is around 0.5 at.% at room temperature [2]. In this presentation, the combination...
Solar ultraviolet (UV) radiation measurement is an important aspect of dosimetry for the knowledge improvement of UV exposure with its associated health related issues. Small amounts of UV are essential for the production of vitamin D that is beneficial for human. Overexposure to solar UV radiation resulting in acute and chronic health effects on the human skin, eye and immune system. Many new instruments...
Bulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures. Therefore, 1D [1], 2D [2] and even 3D [3] massless particles can be observed in topological phase transitions driven by intrinsic (quantum well thickness, Cd content) and external (magnetic field, temperature or pressure) physical parameters. So far, the phases of 2D [1] and 3D [4]...
Tuning the band structure of a topological insulator is of interest for developing electronic devices or superconducting devices. Here we report the strain-dependent results for Bi2Se3 films of various thicknesses that are grown via a self-organized ordering process. From the UV photoemission/inverse photoemission spectroscopy (UPS/IPES) results, ab initio calculations and THz-TDS data, significant...
We report the perovskite:SWNTs solar cells fabricated using solvent-solvent extraction (SSE) method at room temperature. Small quantities of Single-walled carbon nanotubes (SWNTs) are incorporated into perovskite Methylammonium lead halide (CH3NH3PbI3) layer, and enhance the power conversion efficiency (PCE) of the perovskite solar cell from 8.5% to 10.6%. SWNTs act as hole transport channels boosting...
Recently, a new category of layered direct-bandgap semiconductor, phosphorene, with high-mobility transport anisotropy and linear dichroism, has been theoretically discovered and successfully fabricated by micromechanical exfoliation methods. It has been theoretically reported that pristine phosphorene is insensitive to some gas molecules, such as CO and CO2. In this work, we have performed a systemically...
Three-dimensional (3D) printing is a feasible solution for fast prototyping with precision in micrometer range. On the other hand, piezoelectrets are polymeric films with internal cavities, which has been electrically charged, resulting in a material with piezoelectric behavior. In the present paper, both, technology and concept were combined to produce structures with well-defined cavities and electromechanical...
Gallium Oxide is a promising material for power device applications. We focused on corundum structured gallium oxide (α-Ga2O3) and α-(AlxGa1-x)2O3/ α-Ga2O3 heterostructure devices. We prepared α-(AlxGa1-x)2O3 alloy and these laminate structures on c-plane sapphire substrates. The band offset of the α-Ga2O3/α-(AlxGa1-x)2O3 heterostructure was measured by X-ray photoelectron spectroscopy (XPS). The...
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.
In this paper, a memristor with structure of Cu/ PEDOT:PSS/ Ta was fabricated at room temperature. The conductance could be modulated incrementally by pulse sequences. The amplitude, width, frequency and quantity of the pulse sequence play important roles in conductance variation, which is similar to the weight of synapses. Several important synaptic learning behaviors such as short-term potentiation...
We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO2 nano-particles as its resistive switching layer. The efficient physi-(or chem-) sorption of TiO2 endows the GO/TiO2 composites with superior bipolar resistive switching behaviors, including low switching voltage (about ±1V), tight distributions of HRS and LRS, long retention...
Bi-axially oriented PEN film has superior performance in terms of dielectric strength, mechanical strength, heat resistance, anti-hydrolysis, etc. Thus, it has been widely used for energy storage applications, such as capacitors and batteries. In this paper, we attempted to increase the dielectric strength of PEN films by electron beam irradiation. PEN films of two different thickness, 6 µm and 12...
The Cu2ZnSn(S,Se)4 (CZTSSe) absorbers were fabricated by two step process which consists of deposited stacking precursor followed by selenization. We investigated the influence of adding sodium into CZTSSe absorbers via sputtering NaF layer during the fabrication of precursor, or evaporating NaF layer on top of CZTSSe absorbers followed by vacuum annealing. We discovered that the NaF layer at the...
Device modeling and simulation of a mechanically stacked CZTS (top)/CTS (bottom) tandem solar cell have been carried out in this study. The variation of the absorber layer thickness of the CZTS top cell shows that the CZTS/CTS tandem cell could achieve an AM 1.5G conversion efficiency of 13.8% with an optimized CZTS and CTS cell structure. The open circuit voltage and fill factor values of the CZTS...
Recently, the exchange bias (EB) phenomenon in the ferromagnet/antiferromagnet (FM/AFM) bilayer and its inborn instability effect, i.e., training effect [1], have attracted much attention for its great technological importance in spintronic devices. Usually, the study of training effect is performed by continuously recording the exchange field (HE) and the coercivity (HC) after measuring an entire...
The physics of thin films has seen a spectacular development since 30 years. This is due, on the on hand, to numerous electronic applications using thin films, alone or in superlattices or multilayers, and on the other hand, to the lack of theoretical understanding of surface properties which are very different from the bulk ones. Since it is rather easy to change the conditions at the surface of...
Ferromagnetic resonance (FMR) is an effective technique for generating pure spin current in ferromagnetic (FM)/normal(NM) bilayers in which the spin pumping mechanism allows the spin angular moment to be transferred from FM layer into the adjacent NM layer via the enhancement of the damping constant. The pumped spin current transforms to charge current by the inverse spin Hall Effect (ISHE) and the...
Atmospheric pressure dielectric barrier discharge(DBD) plasma surface treatment is a useful means to modify the properties of polytetrafluoroethylene(PTFE) films, such as hydrophily, adhensive ability. A generator with more dielectric layers will affect the plasma characteristics, and then affects the treatment effects on PTFE films. To investigate this influence, some experiments were carried out...
Permalloy (Py) thin films were evaporated from nanocrystalline soft Ni75Fe25 powder onto glass and Al2O3 substrates. The thicknesses of these films range from 16 nm to 250 nm. The as deposited films were characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and vibrating sample magnetometry (VSM). From the GIXRD spectra, we...
Certain results achieved while investigating vacuum and gas discharges can be interpreted in the supposition that on the cathode there are adsorbed nonmetal films consisting of gas atmosphere molecules1. Consider the interface between a metal and a tunnel-thin dielectric film. For the case of an external electric field of strength E applied to the structure, the tunneling electron as a particle-wave...
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