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We propose a novel short and deep drain (SDD) MOSFET structure and SDD based circuits that are suitable for space applications. The 3-D TCAD simulations for heavy ion radiation with LET of 10 MeV-cm2/mg have been carried out on both SDD MOSFET and SDD inverter. From TCAD simulations, we observe that SET magnitude in SDD inverter is reduced by 43% by using shorter drain and by 17% by using deeper drain...
Detailed, physics-based three-dimensional (3D) technology computer-aided-design (TCAD) device model, coupled in mixed-mode with external load circuit and parasitics, enabled accurate simulation of single-event effects (SEEs) in nonplanar silicon-on-insulator (SOI) Multi-Gate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in...
Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeVmiddotcm2 /mg, when temperature rises from -55 to 125degC , the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in...
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