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In power management semiconductor industry, the most comprehensively used metals in microelectronic packages include copper, aluminum, nickel, gold and silver. When different metals contact to each other, intermetallic compound (IMC) will form at the interface. Under different conditions, IMC may vary to show very complicated characteristic and composition, some Moderate IMC will increase interfacial...
A bond pad failure mechanism of galvanic corrosion was studied. Analysis results showed that over-etch process, EKC and DI water over cleaning revealed more pitting with Cu seed due to galvanic corrosion. To control and eliminate galvanic corrosion, the etch recipe was optimized and etch time was reduced about 15% to prevent damaging the native oxide. EKC cleaning time was remaining unchanged in order...
Poly-silicon crater defect generated in large plate of n+ poly-silicon on p-type substrate that resulted in gate oxide integrity (GOI) failure in 0.15mum silicon process is investigated. Al tiny particle accidentally introduced from PECVD resistance protection oxide (RPO) deposition is found to be able to translate into such poly-silicon crater defect in the test structure during subsequent oxide...
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