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At present, and for the last several decades, optical projection lithography has been the lithographic technique used in the high-volume manufacture of integrated circuits. The elementary line width of semiconductor device is now 90 nm, the extreme ultraviolet lithography (EUVL) with a wavelength in the range of 10 to 14 nm is vying to become the choice of the semiconductor industry for the so-called...
Plasma extreme ultraviolet (EUV) source is regarded as the most promising source of EUV radiation as intensive research is underway over the world. A top priority issue for implementing EUV lithography is to upgrade the EUV power extensively. In the development of Z-pinch plasma EUV source, xenon gas is used for the target. The Z-pinch plasma was driven by pulsed current with an amplitude of 30 kA...
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