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Reported for the first time is a full GaAs-based room-temperature near infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6 μm were up-converted to 0.87 μm.
Recent studies of luminescence from silicon wafer solar cells under reverse bias show the potential for detection of defects in these solar cells. It was noticed that there is some distinction between breakdown voltages for various defect types, but there is no clear method to identify the particular chemical or structural origin of the defects being observed. The diode breakdown luminescence spectrum...
We present a single-photon-source design based on the emission of a quantum dot embedded in a semiconductor (GaAs) nanowire. The nanowire ends are engineered (efficient metallic mirror and tip taper) to reach a predicted record-high collection efficiency of 90% with a realistic design. Preliminary experimental results already show a measured efficiency of 44%.
High quality semiconductor microcavities have attracted considerable attention as a compact solid state platform for the investigation of light-matter interaction between photons and excitons in single quantum dots. Owing to a combined optimization of the design (increased number of mirror pairs), the growth conditions (V/III ratio) and the dry etching process we were able to achieve record quality...
Passive terahertz imaging of high spectral sensitivity can be performed using a low temperature sensor coupled to an optical system delivering radiation from room temperature. We study this system in application to security screening and material analysis. Different types of low temperature sensors based on GaAs/AlGaAs quantum dots have been designed and characterised. The most sensitive sensor, which...
This paper reports the theoretical design and performance of In xGa1-xN-based multijunction solar cells for high efficiency. A simulation model is developed which optimizes the design of MJ solar cells for high efficiency. The efficiency was optimized by optimizing the band gap and thickness of different cells while keeping the current mismatch between different cells below 0.2%. The efficiency is...
Polarisation-entangled photon pairs are generated from single InAs quantum dots. This is achieved by restoring the degeneracy of the exciton level with an in-plane magnetic field or by careful selection of the dot.
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