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Lightning strikes are physical phenomena which have adverse effects on power delivery systems and lines. Predicting the geographical and temporal distribution of the lightning strike densities through modeling can help power system designers to improve th e protection of the existing and new power systems and transmission lines. In order to compare th e results of the model simulations to the physical...
This paper proposes that multifractal analysis method be adopted for the analysis of edge images detected with classical edge detectors. We analyze the direct multifractal analysis method based on box-counting method with experimental images, and determine the value of f(q) and a(q). By using this method, we find that the edge images detected by difference edge detectors are similar, but, the multifractal...
We investigate the multifractal character of the realized range-based volatility (RRV) in Shanghai Stock Exchange Composite Index. Through the partition function approach, we estimate the Renyi exponent and the singular spectrum, it has been found that the RRV series have significant multifractal properities. By introducing the shuffled and the surrogate series, we find that the long range temporal...
The purpose of this paper is to present short reviews the face detection techniques and to study the effect of multifractal analysis in detecting facial features. In reviewing the existing techniques, we have compared the performance of Nilsson et alpsilas algorithm, Haar Training implemented within Open Source Computer Vision Library (OpenCV) and Keinzlepsilas algorithm in face detection. Then, we...
In present paper an attempt has been made for unsupervised classification of SAR images based on the surface roughness using multifractal technique. Surface roughness is measured with the help of fractal dimension (D), which lies in the range 2.0 and 3.0. Based on roughness values, i.e., D, various land classes are grouped in different classes. The D values are estimated for a number of local window...
Nonuniformity at the gate oxide interface is considered to be one of the serious fluctuation issues, which is induced by polysilicon grain boundary, impurity segregation, silicide and high-k stack. We introduce a mosaic layer at the gate oxide interface and relate the degree of the nonuniformity with device characteristics through multifractal analysis. There is an analogy between the degree of randomness...
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