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Nanotwinned copper has drawn growing attention recently due to its substantially enhanced mechanical strength and negligible increase in electrical resistivity. The stability of nanotwins under mechanical and electrical stressing becomes a critical consideration. Using a high resolution transmission electron microscopy, we observed that the {112} incoherent twin boundary (TB) and {111} coherent TB...
The erosion generated by the over-polishing step of tungsten CMP (chemical mechanical polishing) may cause metal residue in the surface of upper copper (Cu) damascene interconnects. Generally, lower downforce is effective to decrease the erosion. However, the throughput of W CMP decreases, since the low downforce polishing requires a longer polish time. In this paper, a W CMP procedure with low erosion...
Cu interconnects are required for high-performance system-on-a-chip because of their high performance and reliability (Yokogawa et al., 2001) and (Yokogawa, 2004). However, electromigration lifetime decreases with the cross-sectional area of the line (Yokogawa and Tsuchiya, 2005). To improve reliability, Cu-alloys such as CuSn (Tonegawa et al., 2003) and (Lee et al., 1995) and CuAl (Matsubara et al...
The incubation time in a metal-organic chemical vapor deposition (MOCVD) system using copper (I)-hexafluoroacetylacetonate vinyltrimethoxysilane (Cu(hfac)(VTMOS)) as the precursor to grow copper films has been investigated. For film deposition on a TiN/Si substrate in the presence of H 2 at 473 K, the incubation time is 88 min, while it decreases to 4.3 min on a Pt-seeded surface. The incubation...
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