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In this work, a modulator driver in a 0.25 µm SiGe:C complementary BiCMOS technology with fT/fmax of 110 / 180 GHz for the npn and 95 / 140 GHz for the pnp transistor is presented. The driver is implemented following an H-bridge topology, taking advantage of the availability of the pnp HBTs, and delivers a differential output amplitude of 3 Vpp to a 50 Ω load. Clear eye diagrams up to 28 Gb/s are...
This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
An investigation of the high-voltage/high-current mixed-mode (M-M) stress-induced damage mechanisms of pnp silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented. Different accelerated stress methods, including mixed-mode stress, reverse emitter-base (EB) stress, and forward collector plus reverse EB stress, were applied to pnp SiGe HBTs from a state-of-the-art complementary-SiGe...
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