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An InGaAs pin-diode has been grown on (001) Si- substrate overcoming the lattice mismatch by introducing an III/V-quasi-buffer. The device high speed performance is demonstrated by BER measurements up to 10 Gbit/s.
A monolithic process to co-integrate Si and GaAs circuits on a single chip is described. The co-integration has been realized through the epitaxial growth of a GaAs layer on a prefabricated Si wafer, resulting in a coplanar structure appropriate for IC processing. A composite ring oscillator consisting of Si CMOS and GaAs MESFET inverters connected in a ring was fabricated as a demonstration.<<ETX>>
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