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In this paper, a reliable micro-hotplate with low power consumption is demonstrated by optimizing its structure and materials. Its power consumption is successfully decreased by adopting a structure with two high length-to-width slender beams. High reliability is achieved by improving its mechanical strength and long-term stability. A stacked membrane with residual stress controlled and corner compensations...
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance...
This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (Vth) are 800 mA/mm and +3 V, respectively. These...
An air wedge was created, between 2 square wafers of silicon approximately 7 cm on a side, with the air gap varying in thickness linearly from 0-1650 mum over 7 cm. A Fabry-Perot optical cavity composed of an atomic layer deposition (ALD) Al2O3/HfO2 multilayer was deposited inside the wedge, and the measured resonant wavelength only shifted by -10.3% over a distance of 6 cm along the gas flow direction...
With device scaling, the introduction of emerging materials including nanowires and nanodots is required more than ever. We present several examples of making nanomaterials based on advanced thin film deposition techniques including atomic layer deposition, supercritical fluid deposition (SCFD), and selective epitaxial growth (SEG), and nanohybrid process utilizing self-assembled nano-template. Metallic...
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