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We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout)...
A wide variety of III-V on silicon devices have been demonstrated using direct bonding to achieve high performance, high yield and excellent lifetimes. Examples include a 2.54 Tbit/s network on chip, fully integrated optical gyroscopes and 100 Gbit/s optical transceivers. A related approach is to epitaxially grow III-V quantum dot lasers on silicon. This approach has made excellent progress, with...
In this paper, wafer level transfer of graphene on to a dielectric substrate is demonstrated based on SiO2-SiO2 fusion bonding and de-bonding processes. The developed technique allows to transfer graphene on 200 mm wafer without any contamination; thus CMOS compatible. The experimental data verifies the successful transfer of the graphene on to another substrate with high quality and a yield value...
Single and multi-voids position effects will be highlighted from an electrothermal viewpoint. Complementary numerical investigations will show that these effects are strongly dependent on the properties of the backside metallization of the MOSFET chip. The methodology based on a coupled analysis of electrothermal modeling and experiments that led to these conclusions will be detailed.
As compared to piezoelectric technology, MEMS technology employed for Capacitive Micromachined Ultrasonic Transducer (CMUT) fabrication provides increased compatibility with 3D packaging methods, enabling the possible development of advanced transducer-electronics multi-chip modules (MCM) for medical imaging applications. In this paper, an acoustically optimized 3D packaging method for the interconnection...
This study compared the results of room temperature direct wafer bonding of SiC-SiC accomplished by standard surface activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam, in terms of bonding energy, interface structure and composition as well as the effects of rapid thermal annealing (RTA). Compared with that obtained by standard SAB, the bonding interface of modified SAB with...
Via last TSV (through silicon via) technology is more and more applied in 3D WLCSP, which can decrease package volume and increase I/O density. The process of via last includes temporary bonding, grinding, photolithograph, silicon etching, SiO2 etching, CVD, PVD, plating and so on. Silicon etching and SiO2 etching are important process of via last TSV package for interconnect technology. Temporary...
Cu/adhesive hybrid bonding is a promising technology to fabricate 3D integrated microsystems with ultra-fine pitch and short vertical interconnects, low electrical resistance, and high reliability. The main remaining issues of this technology include bonding temperature mismatch between Cu-Cu (350–400 °C) and adhesive (typically ≤250 °C), long thermal-compression time (low throughput), and high thermal...
Thermal wind sensor has been used to measure wind speed and direction in high temperature due to its principle. In this paper, a novel structure is proposed. It consists of a silicon sensing substrate and a ceramic chip for packaging, in which the sensing chip with through silicon vias (TSV) is Cu-Sn eutectic bonded to the ceramic. This paper focuses on the thermal-mechanical reliability of the novel...
Hybrid integration of GaN and Si photonic devices is promising. Using a polymer bonding technique, GaN microring resonators are fabricated on Si substrate. Transmission characteristics of the GaN microring is measured.
MEMS atomic vapor cells have a large variety of applications in atomic devices such as chip-scale atomic clocks (CSACs), atomic magnetometers and atomic gyroscopes. We report here on the successful wafer-level hermetic sealing of such cells by Cu-Cu thermocompression bonding. This innovative method is used as an alternative to anodic bonding and allows to overcome some of its limitations. In particular,...
In the big data era, a new computing system, called Cognitive Computing, that can handle unstructured data, learn and extract the insights is required. A neuromorphic device is a key component for this, and several architectures are reported. Compared to the neuromorphic device with SRAM-based spiking neural network, a cross-bar structure device realizes on-chip leaning, but requires high-density...
In the big data era, a new computing system, called Cognitive Computing, that can handle unstructured data, learn and extract the insights is required. A neuromorphic device is a key component for this, and several architectures are reported. Compared to the neuromorphic device with SRAM-based spiking neural network, a cross-bar structure device realizes on-chip leaning, but requires high-density...
Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according...
Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die...
Direct metal bonding is a preferred fine-pitch technology for stacking of Si dies in 3D integration. Cu is a metal of choice for direct metal bonding because it is the most common metal for redistribution layer in advanced semiconductor manufacturing, Cu has high conductivity and it is a low cost candidate. However Cu oxidises very fast in air which makes the bonding procedure challenging. In this...
In this paper, a fully BiCMOS integrated microfluidic technology platform for Lab-on Chip (LoC) applications is presented. Fusion bonding and adhesive bonding techniques are applied to realize a 3-wafer-stack integration. A glass wafer is used on top of the BiCMOS wafer and the Si channel wafer to enable simultaneous optical and electrical measurements. An alignment accuracy of less than 1 µm between...
Silver (Ag) has been emerging as an attractive die-attach material for high power devices because of its highest thermal conductivity among metals and high melting stability. The most well-known silver die-attach technique is to sinter micro-or nano-silver pastes. The challenging issues of sintered Ag joints are pores in the joint and migration of unfriendly species such as chlorine ions through these...
Predominant high melting point solders for high temperature electronics contain lead (Pb), which will soon be banned by environmental regulations as in most of consumer electronics. In an effort to replace the Pb-based solders with a new high-temperature capable material, we developed a transient liquid phase (TLP) bonding of bismuth (Bi) and nickel (Ni). A molten Bi (m.p. of 271°C) strongly reacts...
Bump-less Cu/adhesive hybrid bonding is a promising technology for 2.5D/3D integration. The remaining issues of this technology include high Cu–Cu bonding temperature, long thermal-compression time (low throughput), and large thermal stress. In this paper, we investigate a Cu-first hybrid bonding process in hydrogen(H)-containing formic acid (HCOOH) vapor ambient, lowering the bonding temperature...
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