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The small signal levels provided by the limited size and inertial mass of miniature, open-loop MEMS accelerometers provide a challenging problem to achieve low noise and high stability needed for navigation and other applications. The challenge is made more difficult when different applications need to operate at a wide range of different peak g-levels. This paper discusses the performance achieved...
Power Management Integrated Circuits (PMIC) chips contain large power switches - usually LDMOS transistors, along with low current control circuitry. During transistor switching, charge carriers are injected into the substrate and affect the surrounding devices. In junction isolated technologies, hole injection is effectively suppressed using highly doped n-type layers, while electron injection requires...
Our group has designed a family of ASICs dedicated to the readout of semiconductor detectors for space applications, named IDeF-X standing for Imaging Detector Front-end [1]-[3]. IDeF-X BD is a new member of the family. It has been optimized for the readout of low capacitor and low leakage current Silicon or Cd(Zn)Te detectors. IDeF-X BD has been designed in the standard AMS CMOS 0.35 μm process technology...
In this paper, we propose a novel sandwiched-gate inverter by using of an NMOS GAA together with a donut-type PMOS. The DC operation and the transient performance of the proposed inverter were investigated with 3D TCAD simulations. The proposed inverter exhibits a correct inverter operation with a high noise margin and speed.
In high efficiency and high temperature industrial applications, wide bandgap semiconductor devices, such as: Gallium Nitride (GaN) and Silicon Carbide (SiC), are getting great attention due to their outstanding performance. However, a false turn-on phenomenon can be produced by the switching noise because wide bandgap devices have low threshold voltage. Consequently, the efficiency of a switched-mode...
We report on a semiconductor laser on silicon platform with record-low sub-kHz quantum noise-limited linewidth, based on spontaneous emission control and optical loss reduction.
We use classical stimulated four-wave mixing to directly characterize quantum spectral correlations generated in a silicon nanowire for two different pump durations. Signal to noise is increased and acquisition time reduced compared to coincidence detection.
We demonstrate low-noise mid-infrared frequency comb generation using a silicon microresonator. Using an integrated PIN-diode detector, we show a transition to a low RF-amplitude-noise state consistent with demonstrations of phase-locking in other microresonator platforms.
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
The total DDR on-die AC power delivery noise can be decomposed into high pass filtered (HPF) Vppa and low pass filtered (LPF) Vppb. PI-SI co-simulation reveals that Vppa impacts timing (eye width) and Vppb impacts signal voltage amplitude (eye height), and they need to be budgeted in different manner. Consequently the Power Delivery Network (PDN) is optimized with significant Cpkg and Cdie reduction...
Capacitance is very important in High Speed I/O power integrity network design. There are different form of capacitors being used on the High Speed I/O Power Integrity Network to ensure the performance of the circuit. In this paper, the effectiveness of MIM capacitance and MOS capacitance is compared. MIM capacitance comes in bulk quantity but placed further away from the HSIO circuits. While MOS...
Simultaneous transmit and receive systems (STAR) are proposed to double the spectral efficiency and enhance spectrum utilization in the traditional microwave band. A major problem is high power self-interference (SI) due to the proximity of the transmit and receive antennas. In this paper, we propose to significantly improve system-level performance using a novel high isolation RF front-end based...
High speed TSV signals can penetrate through the dielectric liner material, transfer in the silicon substrate and degrade the performance of FEOL devices. In this paper we investigate TSV noise coupling to active device including both FinFET and planar transistors. Calibrated TCAD models are used to perform time domain analysis and understand the mechanisms of substrate noise interaction with active...
This paper describes about newly developed 1700V/400A hybrid module which consists of Si-IGBT and SiC-SBD. The static and dynamic characteristics were evaluated and the turn-on loss is 38% lower and the reverse recovery loss is 83% lower than the conventional all-Si IGBT module because of the reverse recovery current of SiC-SBD is very small to be an unipolar device. The radiation noise on hybrid...
Target localization using AOA measurements has attracted substantial attention for several decades. Traditional algorithms regard the target position as a non-random parameter and employ estimators like least squares (LS) or maximum likelihood (ML) to estimate the target location. In this paper, we propose a new framework for target localization using AOA measurements. The idea of this framework is...
The localization, that allows to precisely know the orientation and position of a system in the environment, is still challenging in urban environments due to satellite occlusion. This phenomenon reduces the data redundancy and provides bad satellite geometry and reflected signals, called multipaths, that distort the measurements and make them erroneous. The RAIM method, integrated in most GPS receivers,...
We present the design and implementation of an analog front-end for smart-sensors and measurement results with prototypes of acceleration micro-sensors. The technology used for sensor manufacturing features silicon nanowires as strain gauges. The proposed system supports Kelvin contacts scheme and sensor bias duty-cycling. A fully-differential amplifier with a sensor-degenerated common-mode rejection...
In this work a high-resolution, low power, successive approximation register (SAR) ADC for X and Gamma Ray Silicon Drift Detector read-out in space applications is presented. The proposed scheme, implemented at transistor level in 0.35 μm CMOS technology consists in an input buffer, a high resolution comparator, a logic control circuit and a capacitive DAC. Simulations carried out in worst case matching...
With the increase of data rate, signal integrity (SI) becomes a bigger challenge for printed circuit board (PCB) designs. Power noise as well as signal loss, inter-symbol interference (ISI), crosstalk needs to be taken into account to ensure a good quality signal design. In this paper, a design case is shared where power noise greatly impacts SATA performance and leads to hard disk (HDD) disconnection...
Nous nous intéressons au problème d'identification de la nature du bruit à partir de l'image observée en vue d'appliquer l'algorithme de traitement ou d'analyse le mieux approprié. Nous nous limitons ici à l'identification des bruits additifs et multiplicatifs. Pour identifier ces deux types de bruit, nous proposons une nouvelle approche qui consiste à caractériser chaque classe, et par consequent...
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