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This paper proposes a novel method to derive the junction temperature of a Silicon Carbide Schottky Barrier Diode (SiC SBD) when it is in operation. There is a correlation between the switching waveforms and the temperature, due to the material parameters and the carrier vary with the temperature. Estimating the Turn-on-delay time as a temperature sensitive electrical parameter (TSEP), the chip temperature...
Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dv/dt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk...
Targeting the development of a silicon carbide (SiC) inverter for electric vehicle/hybrid electric vehicle (EV/HEV) applications, the design considerations of the gate driver for the adopted SiC metal-oxide-semiconductor field-transistor (MOSFET) power modules are presented. Given the system power density requirement, the gate driver design challenges for the commercial off-the-shelf (COTS) SiC modules...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
This paper presents an analytical model to provide a rapid estimation of the steady-state averaged power loss of a T-type STATCOM with Virtual Zero level Modulation (VZM) to balance the neutral point voltage. A case study is then conducted on a 54kVA rated T-type STATCOM system to investigate the power loss distribution over power devices and variations over switching frequency. A comparison is made...
The advancements in wide-band-gap (WBG) devices are enabling applications of power electronics converters coupled directly to medium voltage and incorporating galvanic insulation within the converter using high-frequency solid-state transformers. This paper presents the design and the characterization results of a SiC H-bridge converter suitable for up to 100 kVA single-phase ac-dc modular solid-state...
High voltage and wide bandgap (WBG) semiconductor devices like the 15 kV SiC MOSFET have attracted a lot of attention because of their potential applications in high voltage and high power converters. However, they are not commercially available at present and their high cost might be a hindrance to their widespread adoption in future. To address the commercial unavailability and the high cost issues...
This paper presents the design and control of a three-phase ground power supply unit for aircraft servicing. A new mixed technology converter composed by a three-phase Silicon Carbide (SiC) full bridge unit and a three-phase full bridge IGBT unit connected across the same dc link is used instead of the conventional full bridge configuration. In order to satisfy the stringent requirements of the output...
In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
A three phase power block based on novel 1.7 kV/450 A SiC-MOSFET is designed and tested. To benchmark the performance of the power block, a through comparison is done with currently standardized 1.7 kV/450 A Si-IGBT based three phase power block. Key performance indices, including power rating curves at different switching frequencies and power factors; temperature ripple at different fundamental...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
Silicon carbide (SiC) MOSFETs have been widely studied in high frequency applications. The switching performance, however, is limited with the existence of the parasitic elements. One critical issue is the susceptibility of the gate-source voltage to the parasitic elements, rendering the possibility of spurious operation of the SiC MOSFETs. This paper conducts comprehensive investigations on the impact...
This paper presents dV/dt control technology that enables lower switching loss and surge, especially higher speed switching of silicon carbide (SiC) devices. This technology is a surge reduction method using a high-speed passive gate driver that independently controls turn-on and turn-off events. Experimental results for a prototype gate driver confirmed that switching loss can be reduced by half.
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have become commercially available. The parasitic parameters, such as output capacitance, in each power device are not identical, because they depend on the device structure and material properties. Therefore, voltage sharing of turn-off operations under series-connection conditions of the power devices may be affected...
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
The reverse recovery characteristics of the body diodes of planar and double-trench SiC MOSFETs are experimentally analyzed in switching tests and compared. The body diode of the trench SiC MOSFET shows improved performance, so that using an anti-parallel SBD to suppress the reverse recovery behavior becomes unnecessary. Following the switching tests, the devices are operated in continuous mode in...
In this paper, the authors describe the design of an 80kW power converter for an electrostatic precipitator using SiC MOSFETs. The structure of the converter is based on the series parallel resonant topology, PRC-LCC, with a capacitor as output filter. This topology can cope adequately with the parasitic elements of the step-up transformer involved in the application. The SiC switches present lower...
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