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This paper presents a soft switching technique to improve the efficiency of isolated and non-isolated power converters in the high-frequency range. The designed converter uses two switches i.e. main switch and auxiliary switch which are operated in Zero Voltage Switching (ZVS) and Zero Current Switching (ZCS) respectively. Here, different circuit modes of ZVS PWM buck converter with the proposed ZCS...
This paper presents analysis, design, and implementation of the high-frequency split-pi converter. Split-Pi converter has distinctive features like the symmetry of the input and the output components. Also, the continuity of the input and output currents makes this converter more desirable in applications like electric vehicles and power management. Split-pi converter is a bi-directional voltage-fed...
Performance analysis and output voltage regulation of a cascaded step-up switched-capacitor converter (SCC) under zero voltage switching (ZVS) condition is analyzed in this paper. The ZVS condition (converter operation above its resonant frequency) provides 1) zero-voltage switching, which leads to a relatively higher efficiency compared to zero current switching (ZCS) under the resonant frequency...
Impedance source inverters have attracted much attention in recent years due to their ability to behave as voltage elevators/reducers at their output terminals without the need of an extra dc/dc converter to accomplish this task. Among these inverters, the quasi-impedance source inverter (qZSI) is one of the most known topologies. It considers two basic operating states, the no-shoot-through state...
Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dv/dt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
Bi-directional switches, also called four quadrant switches (FQS), are the basic building blocks in many power converter circuits, such as cyclo-converters, matrix converters etc. Conventional approaches to realize bi-directional switch involves combination of unidirectional controllable blocking device (IGBT or MOSFET) and diode. In this approach, current flows through multiple devices for any direction...
The advancements in wide-band-gap (WBG) devices are enabling applications of power electronics converters coupled directly to medium voltage and incorporating galvanic insulation within the converter using high-frequency solid-state transformers. This paper presents the design and the characterization results of a SiC H-bridge converter suitable for up to 100 kVA single-phase ac-dc modular solid-state...
This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to...
High voltage and wide bandgap (WBG) semiconductor devices like the 15 kV SiC MOSFET have attracted a lot of attention because of their potential applications in high voltage and high power converters. However, they are not commercially available at present and their high cost might be a hindrance to their widespread adoption in future. To address the commercial unavailability and the high cost issues...
In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
A three phase power block based on novel 1.7 kV/450 A SiC-MOSFET is designed and tested. To benchmark the performance of the power block, a through comparison is done with currently standardized 1.7 kV/450 A Si-IGBT based three phase power block. Key performance indices, including power rating curves at different switching frequencies and power factors; temperature ripple at different fundamental...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
Silicon carbide (SiC) MOSFETs have been widely studied in high frequency applications. The switching performance, however, is limited with the existence of the parasitic elements. One critical issue is the susceptibility of the gate-source voltage to the parasitic elements, rendering the possibility of spurious operation of the SiC MOSFETs. This paper conducts comprehensive investigations on the impact...
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have become commercially available. The parasitic parameters, such as output capacitance, in each power device are not identical, because they depend on the device structure and material properties. Therefore, voltage sharing of turn-off operations under series-connection conditions of the power devices may be affected...
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
The medium voltage (MV) high-speed drives are required for traction, wind energy, marine, aerospace, oil, and gas compressors applications. The MV converter must be able to switch at higher switching frequencies (> 5 kHz) to generate higher fundamental frequency AC input voltages for the motor (≥ 500 Hz) and thereby achieving high speed at the motor output (≥ 15000 rpm). This paper presents the...
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