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Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
In this work, we have investigated the effect of thin SiO2 layer on switching variability of SiNx-based RRAM. We found that recessive LRS state generated in set operation results in large reset current and abrupt reset operation. The abrupt reset operation leads to large HRS distribution. To investigate the transient characteristics of switching process in detail, measurement environment is implemented...
The subthreshold swing (SS) in MOSFETs is limited to 60 mV/dec change in drain current at room temperature by the Boltzmanr distribution of carriers, thus limiting its operating voltage (VD>SS×log Ion/IOFF). Ferroelectric FETs can achieve sub-60 mV/dec by harnessing the negative capacitance (NC) effect in a Ferroelectric (FE) material, thus enabling low voltage operation [1]. Previous works have...
Rapid sintering of nanosilver paste had been proposed to bond power chips in our previous work. It seems a potential good way to improve the efficiency of power module manufacturing because of the much shorter sintering time, i.e., 15 seconds. In this study, we tried the way of rapid sintering of nanosilver paste for bonding power chips in order to verify the feasibility of the rapid sintering method...
Most of the domestic, industrial and agricultural loads are inductive in nature which results in lagging power factor further corresponding to power losses at substation level to consumer level. To avoid this, capacitor banks at large scale are installed at the substation (near to the source). As every boon comes with a bane, capacitor banks too causes high frequency and high current transients during...
The capacitive switching is frequently encountered in power systems for improving the voltage regulation profile. But, it requires special attention due to an accumulation of electrical charge. This accumulated charge after current interruption can cause a dielectric re-ignition in the switching device such as circuit breaker. When this process repeats, the interruption of capacitive currents causes...
Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross...
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value...
Aside from the benefits it brings, 3D-IC technology inevitably exacerbates the difficulty of power delivery with volumetrically increasing power consumption. Recent work managed to “recycle” current within the 3D stack by linking the different layers' supply/ground nets into a series connection. This charge-recycled (also known as voltage-stacked, or V-S) scheme provides a scalable solution for 3D-IC's...
This paper proposes a controllable resistive type fault current limiter for soft and fast starting of induction motors (IMs) based on the primary resistance method. Two methods of constant current and minimized torque pulsations starting for the proposed FCL are presented. A comparison is done and it is shown that method of minimized torque pulsations by the proposed structure leads to a fast and...
Switching devices such as Silicon Carbide (SiC) MOSFET present significant performance improvement in high frequency switching power converter applications. This paper presents a gate charge profile investigation of a Silicon Carbide MOSFET and gate driver circuit solutions to optimize both switching speed, power losses and EMI requirements. Main technology issues of Silicon carbide MOSFET are presented...
To reduce the power dissipation and switching stress of high power IGBTs during switching transient, a new active gate drive method based on voltage controlled current source (VCCS) is proposed in this paper. Compared to the conventional gate drive (CGD) for IGBTs, the proposed current source gate drive (CSD) method achieves faster switching speed and effective control on current overshoot at turn-on...
This paper proposes a new macromodel that takes into account the threshold switching and the resistance recovery processes in addition to the drift behavior of a Phase Change Memory (PCM). Simulation results are provided for both DC and drift behaviors; they show that the proposed macromodel is very accurate at a small error when compared with data from experimental devices. A sensitivity analysis...
In this paper we review a dynamic device model for filamentary RRAM in HfO-based dielectrics. We summarize its transient modeling features and its statistical properties. The model explains with satisfactory quantitative resolution all main features of the RRAM switching, not just the voltage, time and temperature dependence, but also statistical fluctuations resulting from atomistic motion and their...
For high efficiency, the proposed constant on-time controlled switching regulator (SWR) directly supplies to Wi-Fi systems without cascading any low dropout regulators. On-time value adjusted by the proposed transient-enhanced technique greatly reduces transient voltage variations. Besides, an asynchronous auto-zero technique is used to minimize offset voltage effect to ±0.5% in steady state. Experimental...
Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems — TaOx and TiOx, and compare the similarities and the universality in its control parameters. After comparing...
In a phase-leg configuration, the high switching-speed performance of silicon carbide (SiC) devices is limited by the interaction between the upper and lower devices during the switching transient (cross talk), leading to additional switching losses and overstress of the power devices. To utilize the full potential of fast SiC devices, this paper proposes a gate assist circuit using two auxiliary...
This paper describes an analytical study of synchronous logic gate design based on hybrid structure with MOS and resistive switching non-volatile memories (RS-NVMs). This type of structure allows ultra-low power consumption during power down, while often-used data are saved in RS-NVM cells. The parallel data sensing achieves low-power and fast computation time. The logic gate construction theory,...
Emerging non-volatile memories (NVM) such as STT-MRAM and OxRRAM are under intense investigation by both academia and industries. They are based on resistive switching mechanisms and promise advantageous performances in terms of access speed, power consumption and endurance (i.e. >1012), surpassing mainstream flash memories. This paper presents a non-volatile full-adder design based on complementary...
Modeling and analysis of basic DC-DC converters is essential for enabling power-electronic solutions for the future energy systems and applications. Many average-value modeling (AVM) techniques including state space averaging and circuit averaging have been developed over the years and available in the literature. Average-value modeling of ideal PWM converters neglects parasitics (losses) to simplify...
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