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We tried to detect a strain in the crystal induced by the ordering of the EL2 defects in the metastable state by measuring linear dichroism and birefringence. We found that this strain is below the detection limit of our experiments and lower than that induced by 1 MPa of external stress. The observed dependence of orientation of the EL2 defects in the metastable state on the polarization of light...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during heating of the crystal. The recovery step, occurring at about 45 K in n-type GaAs, splits into two components under [111] stress, and no splitting is observed under [100] stress. The same behavior under uniaxial stress shows the recovery occurring at 125 K in semi-insulating GaAs. A fraction of centers...
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