The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The paper proposes a simple and novel technique for driving a silicon carbide power MOSFET using silicon power MOSFET driver IC and single unipolar supply voltage. In the proposed technique, a unipolar supply voltage is given to the driver IC and split by an RC divider network for obtaining an intermediate reference point which is connected to the source terminal of the SiC MOSFET. The gate terminal...
We propose a low surge voltage and fast speed gate driver with switched capacitor circuit for Silicon-Carbide (SiC) MOSFET. Because of the high switching frequency of SiC MOSFET, the surge voltage becomes a serious problem which cause a high switching loss and may break the SiC MOSFET. There is a trade-off between surge voltage and switching speed. It is hard to fulfill both of them at the same time...
Currently, former DC supply systems reach their limits. In several European Railway networks, there are several sectors where it is not possible to operate locomotives at their nominal ratings or to increase traffic. Indeed, the line-voltage drops between substations leads to severe limitations. To improve the power capacity of the line, a three-wire supply system with voltage boosters based on Imbricated...
This work evaluates the reverse recovery behavior of CREE's Gen 3 900V SiC MOSFET's body diode under different conditions. As the highest current rating discrete SiC MOSFET available up-to-now, CREE's Gen 3 900V 10 mΩ SiC MOSFET is the main device under test (DUT) in this work. Both static and dynamic characteristics of the DUT are presented. The factors that show effects on reverse recovery behavior...
This paper deals with the design of a DC/DC boost converter aimed at Fuel Cell Vehicle (FCV) application. In order to extend the FC lifespan and to increase the reliability, efficiency and power density, a DC/DC boost converter should be designed with the following features: low current ripple, low weight, low volume, and high redundancy. In this study, a 6-phase Interleaved Boost Converter (IBC)...
This paper addresses a study of output voltage of a switched capacitor step down converter for a high voltage application. The proposed design is 3:4 Series to parallel switched capacitor converter based on capacitors and switches only. The Slow Switching Limit Impedance was theoretically calculated and proven. The Slow Switching Limit Impedance has an inverse relation with switching frequency and...
The power delivered by a photovoltaic (PV) to the grid must be modified in multiple stages. The operation concept of the micro-inverter is to increase the low output voltage received from a PV panel. Wide bandgap (WBG) power devices such as SiC MOSFETs offer multiple advantages over traditional silicon power devices when are used in a solar energy field due to their high switching frequency, high...
This paper presents a H-bridge building block with 1700V SiC MOSFET for a pulsed power application to achieve both high voltage, high current and high switching frequency capability. Both power module level and system level stray inductance is minimized to better utilize the SiC high switching speed capability. Meanwhile, since the large pulsed energy is required to drive the pulsed load, voltage...
This paper presents a systematic study of the busbar design and optimization for SiC-based H-bridge power electronics building block (PEBB) used in high-frequency and high-power applications. Step-by-step guidelines are presented in which the design considerations and analysis are given. This paper presents a double-sided busbar concept to create a compact PEBB design with improved thermal and switching...
High power, high repetition rate capacitor charging circuit is presented. The circuit uses four SiC MOSFET switches in parallel in a modified boost converter configuration. Switching losses, already reduced due to the fast switching characteristics of the SiC devices are further mitigated by an auxiliary switch enforcing zero voltage turn-on of the main switches. The charging circuit is expected to...
Single-die, silicon carbide (SiC) Insulated-Gate Bipolar Transistors (IGBTs) fabricated on wide epitaxial drift regions have been developed reaching avalanche breakdown voltages greater than 24 kV and rated currents up to 20 A. This work utilizes similar research-grade, SiC IGBT devices to investigate their continuous switching capabilities, by integrating them in a high voltage, non-isolated, step-down...
This paper presents a study of the GaN HEMT switching features conducted with the use of the half-bridge test converter rated at 2,5 kW. Results of simulation performed in LTSpice are verified by a series of experimental tests at the variable input voltage (up to 400 V) and switching frequency (up to 250 kHz). Three switch scenarios were analyzed: HEMT without the anti-parallel diode, HEMT with an...
A novel low-inductance packaging layout for Full-SiC (Silicon Carbide) MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Module with split damping capacitors embedding inside is proposed in this paper. The 3-Demision model of the optimized layout was built and analyzed with ANSYS Q3D. The total self-inductance of the single commutation loop is only 6.2nH. Additionally, 55V voltage spike over...
SiC MOSFET has low on-state resistance and can work on high switching frequency, high voltage and some other tough conditions with less temperature drift, which could provide the significant improvement of power density in power converters. However, for the bridge circuit in an actual converter, high dv/dt during fast switching transient of one MOSFET will amplify the negative influence of parasitic...
This paper discloses the development of 15-kV class intelligent universal transformer (IUT) to show system level design, circuit topology, and prototype test results. The complete system is split into two stages: (1) high-voltage ac to low-voltage dc and (2) low-voltage dc to low-voltage ac. With the adoption of silicon carbide (SiC) devices, the high-voltage front-end ac to low voltage dc conversion...
This paper presents a high performance cost-effective medium voltage power switch based on the series-connection of low voltage SiC normally-on JFETs using an innovative approach. A prototype module of the proposed switch is experimentally demonstrated having an on-resistance of 127 milliohm and a blocking voltage above 4,500V at room temperature. The prototype module is capable of very low switching...
This paper is focused on the characterization of the turn-ON transition of high-voltage SiC thyristors of different epi-layer thicknesses and active-area sizes to determine their suitability and limitations in high-$dI/dt$ , fast-switching applications. The unique aspects of this paper include the very high current density being switched through the thyristors over a short period of time at initial...
The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented...
A cascoded GaN Current Aperture Vertical Electron Transistor (CAVET), which incorporates a normally off low-voltage Si MOSFET at the input and a normally on high-voltage GaN CAVET at the output in a cascode form, has been simulated and analyzed using a device/circuit hybrid simulator implemented in Silvaco ATLAS. The hybrid simulator was achieved by integrating the Silvaco ATLAS based 2D drift-diffusion...
With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.