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Atomically thin bismuth oxyselenide (Bi2O2Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge‐carrier mobility and good air stability. Recently, the development of Bi2O2Se‐based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2O2Se‐based heterostructures...
Monolayer transition metal dichalcogenides have attracted great attention for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, a largely enhanced valley polarization up to 80% in monolayer WS2 under nonresonant excitation at 4.2 K is demonstrated using WS2/LaMnO3 thin film heterostructure, which is much...
2D heterostructures made of transition metal dichalcogenides (TMD) have emerged as potential building blocks for new‐generation 2D electronics due to their interesting physical properties at the interfaces. The bandgap, work function, and optical constants are composition dependent, and the spectrum of applications can be expanded by producing alloy‐based heterostructures. Herein, the successful synthesis...
Heterostructures of transition metal dichalcogenides and optical cavities that can couple to each other are rising candidates for advanced quantum optics and electronics. This is due to their enhanced light–matter interactions in the visible to near‐infrared range. Core–shell structures are particularly valuable for their maximized interfacial area. Here, the chemical vapor deposition synthesis of...
Advances in large‐area and high‐quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas‐phase alkali metal‐assisted metal‐organic chemical vapor deposition (GAA‐MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas‐phase alkali‐metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain...
Realizing perfect light absorption in stacked thin films of dielectrics and metals through critical light coupling has recently received intensive research attention. In addition, realizing ultra‐thin perfect absorber and tunable perfect absorber in the visible spectrum is essential for novel optoelectronics applications. However, the existing thin film stacks cannot show tunable perfect absorption...
Two‐dimensional (2D) devices and their van der Waals (vdW) heterostructures attract considerable attention owing to their potential for next‐generation logic and memory applications. In addition, 2D devices are projected to have high integration capabilities, while maintaining nanoscale thickness. However, the fabrication of 2D devices and their circuits is challenging because of the high precision...
Atomically thin monolayer semiconducting transition metal dichalcogenides (TMDs), exhibiting direct band gap and strong light‐matter interaction, are promising for optoelectronic devices. However, an efficient band alignment engineering method is required to further broaden their practical applications as versatile optoelectronics. In this work, the band alignment of two vertically stacked monolayer...
Development of a reliable doping method for 2D materials is a key issue to adopt the materials in the future microelectronic circuits and to replace the silicon, keeping the Moore's law toward the sub‐10 nm channel length. Especially hole doping is highly required, because most of the transition metal dichalcogenides (TMDC) among the 2D materials are electron‐doped by sulfur vacancies in their atomic...
Binary van der Waals heterostructures of graphene (Gr) and transition metal dichalcogenide (TMDC) have evolved as a promising candidate for photodetection with very high responsivity due to the separation of photo‐excited electron–hole pairs across the interface. The spectral range of optoelectronic response in such hybrids has so far been limited by the optical bandgap of the light absorbing TMDC...
The oxygen reduction reaction (ORR) 2e− pathway provides an alternative and green route for industrial hydrogen peroxide (H2O2) production. Herein, the ORR photo/electrocatalytic activity in the alkaline electrolyte of manganese and iron porphyrin (MnP and FeP, respectively) electrostatically associated with modified 1T/2H MoS2 nanosheets is reported. The best performing catalyst, MnP/MoS2, exhibits...
Development of efficient surface passivation methods for semiconductor devices is crucial to counter the degradation in their electrical performance owing to scattering or trapping of carriers in the channels induced by molecular adsorption from the ambient environment. However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent...
Van der Waals semiconducting heterostructures, known as stacks of atomically thin transition‐metal dichalcogenide (TMD) layers, have recently been reported as new quantum materials with fascinating optoelectronic properties and novel functionalities. These discoveries are significantly related to the interfacial carrier dynamics of the excited states. Carrier dynamics have been reported to be predominantly...
Owing to their practical applications, two‐dimensional semiconductor p–n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p–n junction diode is formed in tungsten diselenide (WSe...
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