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2D van der Waals (vdW) semiconductors hold great potentials for more‐than‐Moore field‐effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high‐k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high‐k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier...
Bismuth oxyselenide (Bi2O2Se) has emerged as a promising candidate for electronic and optoelectronic applications due to its outstanding electron mobility and ambient stability. However, high dark current and relatively slow photoresponse that originate from high charge carrier concentration as well as bolometric effect in Bi2O2Se inhibit further improvement of Bi2O2Se based photodetectors. Here,...
The continuous, real‐time, and concurrent detection of multiple biomarkers in bodily fluids is of high significance for advanced healthcare. While active, semiconductor‐based biochemical sensing platforms provide levels of functionality exceeding those of their conventional passive counterparts, the stability of the active biosensors in the liquid environment for continuous operation remains a challenging...
In recent years, 2D layered semiconductors have received much attention for their potential in next‐generation electronics and optoelectronics. Wide‐bandgap 2D semiconductors are especially important in the blue and ultraviolet wavelength region, although there are very few 2D materials in this region. Here, monolayer β‐type zirconium nitride chloride (β‐ZrNCl) is isolated for the first time, which...
Graphene Nanoribbons
This work studies the growth, characterization, and device integration of 5‐armchair graphene nanoribbons (GNRs). 5‐AGNRs are synthesized under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. In article number 2202301, Gabriela Borin Barin, Pascal Ruffieux, and co‐workers show that I‐substituted precursors and optimized initial precursor coverage quintuple the...
The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful...
Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high‐performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n‐type TMDs such as MoS2 and WS2 grown at wafer scale have been demonstrated, realizing CMOS electronics...
Development of efficient surface passivation methods for semiconductor devices is crucial to counter the degradation in their electrical performance owing to scattering or trapping of carriers in the channels induced by molecular adsorption from the ambient environment. However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent...
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