The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
On page 2715, physically transient resistive switching memory based on silk fibroin is demonstrated by Y. Hao, X. Chen, and co‐workers. The memory devices can be absolutely dissolved in deionized water or phosphate‐buffered saline in 2 hours. The transient devices have the potential for application in secure data storage systems and biocompatible electronics.
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications.
A key requirement for using memristors in functional circuits is a predictive physical model to capture the resistive switching behavior, which shall be compact enough to be implemented using a circuit simulator. Although a number of memristor models have been developed, most of these models (i.e., first‐order memristor models) have utilized only a one‐state‐variable. However, such simplification...
Ultra‐lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm−2, which is 320‐fold lighter than silicon substrate, 20‐fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 105, retention time of 104 s, and excellent flexibility (bending radius of 800 μm) have been achieved.
In article number 1604306, Shibing Long, Ming Liu and co‐workers, review performance improvements in resistive switching devices. The main focus is on filamentary switching behavior, in the aspects of materials modulation, device structure design and switching operation scheme optimization. In particular, 2D nanomaterials that play active roles and exhibit prominent effects in applications are discussed...
Reversible chemical and structural changes induced by ionic motion and reaction in response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal structures. Filamentary switching based on the formation and rupture of nanoscale conductive filament has been applied in non‐volatile memory and volatile selector devices with low power consumption and fast switching speeds...
Materials that can couple electrical and mechanical properties constitute a key element of smart actuators, energy harvesters, or many sensing devices. Within this class, functional oxides display specific mesoscale responses which often result in great sensitivity to small external stimuli. Here, a novel combination of molecular beam epitaxy and a water‐based chemical‐solution method is used for...
In article number 1701614, Andrés Gómez, Adrián Carretero‐Genevrier, and co‐workers report a novel approach to integrate epitaxial nanostructured n‐type semiconducting BaTiO3−δ films on silicon by combining molecular beam epitaxy and a water‐based chemical method. This growth strategy results into epitaxial BaTiO3−δ/La0.7Sr0.3MnO3/SrTiO3/Si columnar nanostructures that enhance the flexoelectric response...
The crossbar structure of resistive random access memory (RRAM) is the most promising technology for the development of ultrahigh‐density devices for future nonvolatile memory. However, only a few studies have focused on the switching phenomenon of crossbar RRAM in detail. The main purpose of this study is to understand the formation and disruption of the conductive filament occurring at the crossbar...
Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two‐terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration...
In article number 1800288, Ye Zhou, Su‐Ting Han, Vellaisamy A. L. Roy, and co‐workers develop a biological spiking synaptic device with important synaptic behaviors constructed from solution processed bimetal core‐shell nanoparticle based composites. This work demonstrates that the polymer–metal nanoparticle composites based artificial synaptic devices have great potential for the realization of a...
Inspired by the highly parallel processing power and low energy consumption of the biological nervous system, the development of a neuromorphic computing paradigm to mimic brain‐like behaviors with electronic components based artificial synapses may play key roles to eliminate the von Neumann bottleneck. Random resistive access memory (RRAM) is suitable for artificial synapse due to its tunable bidirectional...
Graphene oxide (GO)‐based resistive‐switching (RS) memories offer the promise of low‐temperature solution‐processability and high mechanical flexibility, making them ideally suited for future flexible electronic devices. The RS of GO can be recognized as electric‐field‐induced connection/disconnection of nanoscale reduced graphene oxide (RGO) conducting filaments (CFs). Instead of operating an electrical...
In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory...
Nanoactuators are a key component for developing nanomachinery. Here, an electrically driven device yielding actuation stresses exceeding 1 MPa withintegrated optical readout is demonstrated. 10 nm thick Al2O3 electrolyte films are sandwiched between graphene and Au electrodes. These allow reversible room‐temperature solid‐state redox reactions, producing Al metal and O2 gas in a memristive‐type switching...
In article number 1803970, Xiaoning Zhao, Haiyang Xu, and co‐workers achieve a biocompatible resistive switching memory with pectin extracted from natural orange peel. The memory with flexible and multilevel characteristics is designed to dissolve rapidly in deionized water, which possesses promising potential to be applied in high‐density secure storage systems, flexible electronics, and green electronics...
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with the transient feature can also be developed as secrecy information storage systems besides the above advantage. Resistive switching (RS) memory is...
Due to their advantages compared with planar structures, rolled‐up tubes have been applied in many fields, such as field‐effect transistors, compact capacitors, inductors, and integrative sensors. On the other hand, because of its perfect insulating nature, ultrahigh mechanical strength and atomic thickness property, 2D hexagonal boron nitride (h‐BN) is a very suitable material for rolled‐up memory...
Resistive random‐access memory (RRAM) is a promising candidate for next‐generation nonvolatile random‐access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization‐dominated and defect‐dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic...
Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering, and lattice degrees of freedom. Among the exotic phenomena arising from such an interplay, metal–insulator transitions (MITs) are fundamentally still not fully understood and are of large interest for novel nanoelectronics applications,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.