Bolometric photodetectors have been widely investigated and studied since their delicate applications in military, commercial, public, and academic domains. In article number 1904482, Hailin Peng, Xueao Zhang, Shiqiao Qin, and co‐workers report that a Bi2O2Se‐based bolometer shows a high temperature coefficient of resistance (−1.6% K−1), high bolometric coefficient (−31 nA K−1) and high bolometric responsivity (>320 A W−1). These findings offer a new approach to develop bolometric photodetectors based on Bi2O2Se‐layered materials.