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We present a detailed atomistic analysis of the electronic properties of m‐plane InGaN/GaN quantum wells. The tight‐binding model used treats realistically sized systems atomistically and accounts for compositional and structural inhomogeneities. Local variation in strain and built‐in potential arising from random alloy fluctuations are explicitly included in the model. Many energy states of the...
Self‐organized GaSb quantum dots are embedded in GaP by molecular beam epitaxy and ‐diodes are fabricated. The structure of the sample is investigated using transmission electron microscopy with atomic resolution. The presence of quantum dots on top of a wetting layer and interdiffusion processes between Sb and P are observed. The localization energy, capture cross‐section, and storage time of...
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