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In this paper, a probe‐fed rectangular microstrip patch antenna with metallic frequency selective surface as superstrate has been analyzed and simulated at terahertz frequency. In addition to this, a novel technique has been proposed to predict the directivity of the antenna at submillimeter and terahertz waves where far‐field measurement is a challenging task. Moreover, the effect of the size of...
The potential of gallium nitride–distributed transferred electron device is theoretically investigated for the realization of terahertz radio frequency (RF) power sources. The device numerical physical modeling relies on a 2D time‐domain electromagnetism/transport simulator. It is based on the coupled solution of the Maxwell and energy‐momentum macroscopic transport equations. The study is focused...
A hybrid graphene‐metal grating is simulated and analyzed at terahertz frequency band by using the hybrid implicit‐explicit finite‐difference time domain (HIE‐FDTD) method. To simulate the graphene layer accurately, both the interband and intraband conductivity of the graphene are incorporated into the HIE‐FDTD method by using the auxiliary differential equations and Pade fitting technique. Numerical...
This paper gives a comprehensive detail about an emerging InAs high electron mobility transistor (HEMT) technology with proper material combination making it suitable for low‐power and high‐frequency applications. Over the decade, various material combinations were adopted to improve the sheet‐carrier density and frequency performances. In this work, we report the performance and optimization of 30‐nm...
Indium phosphide (InP)‐based transistors play an important role in high‐speed circuit and high‐frequency analog circuit applications. Over the past few decades, terahertz heterojunction bipolar transistor (HBT) is increasingly developed. As a result, many reports of HBTs operating at terahertz region have flourished. Since the high‐frequency circuit design faces the challenge from the lack of precise...
In this paper, a novel small‐signal equivalent‐circuit model of terahertz InGaAs/InP double‐heterojunction bipolar transistor (DHBT) is presented. Two intrinsic base resistances are introduced to represent the nonuniform extrinsic impedance of base‐emitter and base‐collector junctions separately. This treatment makes the high‐frequency model more close to the triple‐mesa InP DHBT structure. Systematical...
Mutual injection locking of multi‐element graphene nanoribbon impact avalanche transit time (G‐IMPATT) sources designed to operate at different millimeter‐wave (mm‐wave) and terahertz frequencies has been studied. Planar circuit is used for implementing the mutual injection locking between adjacent elements of the source operating in parallel‐connected‐power‐combined mode. The static, high frequency...
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