In the present work, we demonstrate the fabrication technique of highly translucent layers of nanoparticulated (~50 nm) LuPO4:Eu phosphor, present their basic luminescent properties and give results of their performance in a planar imaging system coupled to a CMOS photodetector. For comparison, the imaging performance of an opaque Gd2O2S:Eu phosphor screen prepared by sedimentation is also shown. The X-ray detection parameters as well as the luminescence efficiency of the investigated films were discussed. Results show that the in-line transmittance at ~600–700 nm, in the range of the phosphor luminescence, varies with respect to the thickness of the films from 40 to 50 % for a film of 67 μm thick to 4–12 % when the thickness increases to 460 μm. Yet, X-ray detection parameters get enhanced as the thickness of the films increases. Those results affect the luminescence efficiency curves of the films under poly-energetic X-ray radiation of various tube energies. The normalized noise power spectrum values were found similar for LuPO4:Eu films and a phosphor screen made using commercial Gd2O2S:Eu powder. The detective quantum efficiency of our films is clearly lower compared to the Gd2O2S:Eu screen from 2 to 10 cycles mm−1 frequency range while the modulation transfer function is lower from 0 to 5.5 cycles mm−1 frequency range. The acquired data allow to predict that high-temperature sintering of our films under pressure may help to improve their imaging quality, since such a processing should increase the luminescence efficiency without significant growth of the grains and thus without sacrificing their translucent character.