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Structural, elastic, and electronic properties of the group-III nitride and the group-II oxide semiconductors are introduced here with basic material parameters. These materials generally have uniaxial anisotropy due to the wurtzite-type crystal structure. The basic formulae on the elastic properties and the electronic structures characterized by the uniaxial anisotropy are presented in this chapter.
The solvothermal growth of ZnO and GaN is presented. The hydrother-mal method yields large ZnO crystals of excellent crystallinity. The physical properties of the crystals are discussed. Liquid phase epitaxy of ZnO is employed as a tool for fast screening. The ammonothermal method is used to fabricate GaN bulk crystals. General aspects are discussed and the use of acidic mineralizer is focused on...
. Zinc oxide (ZnO) and gallium nitride (GaN) are wide bandgap semi conductors applicable to light emitting diodes (LEDs) and laser diodes (LDs) with wavelengths ranging from ultraviolet to blue light. Now ZnO and GaN are key ma terials for optoelectronic device applications and their applications are being rapidly expanded to lots of other technology including electronics, biotechnology, nanotech-nology,...
Control of polarity in wurtzite nitride and oxide films and device applications of polarity are discussed. Controlling as well as evaluating the polarity of grown films is very important in exploring and investigating materials properties of polar wurtzite nitride and oxide films as the properties of films and devices have been strongly affected by the polarity of films. After describing various determination...
Growing high quality nonpolar films is difficult compared to polar films. Pure a-plane nonpolar films have been grown without difficulty; however, growing pure m-plane films is not easy and other planes coexist parallel to the interface. In this chapter, growth of nonpolar GaN and ZnO films is described. Growth characteristics and properties of nonpolar (a-plane and m-plane) and semipolar GaN films,...
Characteristics of the various kinds of structural defects in GaN and ZnO films and advances in techniques to reduce a dislocation density are presented. Heteroepitaxial GaN and ZnO films have various kinds of structural defects including misfit dislocations, threading dislocations, stacking faults, nanopipes, and inversion domain boundary, which inevitably affect the properties of the films and devices...
A brief review on the optical properties of wurtzite ZnO and GaN is presented in this chapter with an emphasis on comparison between the materials. The properties of free excitons and impurity-bound excitons, such as their energetic positions and binding energies, are summarized. The localization energy and the ionization energy of the dominant impurities obtained by emission spectroscopy are also...
Conductivity control is one of the important issues in GaN and ZnO because various types of native defects that hamper high conductivity or high resistivity are easily formed in the materials during growth. These defects are generated as a result of crystal imperfections, which have an influence on the material properties and device performance by introducing shallow or deep levels into the bandgap...
In the recent several decades, there are huge concerns in solid-state light emitters based on semiconductor compound materials, which emit light of ultraviolet to red light. Light-emitting diode (LED) fabrication technology for this application is now relatively mature. Currently, the lifetime of blue or green light-emitter are apparently determined mostly by light-induced degradation of a packaging...
The current researches on GaN- and ZnO-based nanostructures are reviewed with the emphasis on fundamental growth kinetics, characteristics, and applications. The nanostructured materials have unique properties and the devices employing the nanostructures show superior performances when compared with the conventional devices without the nanostructures. Control of shapes and sizes of the nanostructures...
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