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In this study, we fabricate uniform silicon nanowire (SiNW) arrays on 6-inch mono- and multi-crystalline wafers by employing the improved solution-processed metal-assisted chemical etching (MacEtch) method. Furthermore, the improved MacEtch can be applied to various crystalline orientation wafers. The SiNW arrays are 470 nm in length with high density; they demonstrate a good optical trapping effect...
Silicon nanowires (SiNWs) show a great potential for energy applications because of the optical confinement effect, which enables the fabrication of highly efficient and thin crystalline silicon (c-Si) solar cells. Since a 10-μm-long SiNW array can absorb sufficient solar light less than 1200 nm, the 10-μm-long SiNW was fabricated on Si wafer to eliminate the influence of the Si wafer. On the other...
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