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Heterostructure ReS2/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO4 laser was demonstrated by employing heterostructure ReS2/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with...
The two-dimensional (2D) layered material MoS2 has attracted numerous attentions for electronics and optoelectronics applications. In this work, a novel type of MoS2-doped sol-gel glass composite material is prepared. The nonlinear optical properties of prepared MoS2/SiO2 composite material are measured with modulation depth (ΔT) of 3.5% and saturable intensity (Isat) of 20.15 MW/cm2. The optical...
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