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We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K. The variation of reverse current with the electric field indicates that the Schottky emission is the dominant carrier transport mechanism under reverse bias rather than the Frenkel–Poole trap-assisted emission model. Moreover,...
The edge-terminated Au/Ni/β-Ga2O3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 1014 cm−2 and 1 × 1016 cm−2, the reverse breakdown voltage increases from 209 to 252 and 451 V (the maximum up to 550 V) and the Baliga figure-of-merit (VBR2/Ron) also...
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