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In this work, we have studied the electrical and thermal stability of Ru and RuO2 electrodes on ZrO2 and Zr-silicate dielectrics. Very low resistivity Ru and rutile stoichiometric RuO2 films, deposited by reactive sputtering, were evaluated as gate electrodes on ultrathin ZrO2 and Zr-silicate (∼2.7 nm) films for Si-PMOS devices. Thermal and chemical stability of the electrodes were studied at annealing...
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