Semiconductors is a journal that сovers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, devices based on semiconductors and nanostructures including lasers, semiconductor surface physics, and structural defects in semiconductors. PEER REVIEW Semiconductors is a peer reviewed journal. We use a single blind peer review format. Our team of reviewers includes over 140 experts from 7 countries (Russia, Ukraine, Belorussia, Germany, France, UK, USA). The average period from submission to first decision in 2018 was 14 days, and that from first decision to acceptance was 21 days. The rejection rate for submitted manuscripts in 2018 was 18%. The final decision on the acceptance of an article for publication is made by the Editor-in-Chief or the Deputy Editor-in-Chief. Any invited reviewer who feels unqualified or unable to review the manuscript due to the conflict of interests should promptly notify the editors and decline the invitation. Reviewers should formulate their statements clearly in a sound and reasoned way so that authors can use reviewer’s arguments to improve the manuscript. Personal criticism of the authors must be avoided. Reviewers should indicate in a review (i) any relevant published work that has not been cited by the authors, (ii) anything that has been reported in previous publications and not given appropriate reference or citation, (ii) any substantial similarity or overlap with any other manuscript (published or unpublished) of which they have personal knowledge.
Semiconductors
Description
Identifiers
ISSN | 1063-7826 |
e-ISSN | 1090-6479 |
DOI | 10.1134/11453.1090-6479 |
Publisher
Pleiades Publishing
Additional information
Data set: Springer
Articles
Semiconductors > 2019 > 53 > 11 > 1439-1444
Thin films of solid solutions based on the three-dimensional Dirac semimetal Cd3As2 with the addition of manganese are investigated. Cd3 –xMnxAs2 films (x = 0, 0.05, and 0.1) 50–70 nm in thickness are formed on a glassceramic substrate using vacuum-thermal deposition from cadmium arsenide ingots doped by Mn and fabricated by direct alloying elements by the vacuum-cell method. The temperature and magnetic-field...
Semiconductors > 2019 > 53 > 11 > 1457-1464
The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.
Semiconductors > 2019 > 53 > 11 > 1465-1471
(ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from...