We report a detailed study on control of sputtering parameters for synthesizing NbN superconducting thick films. The NbN films are deposited on single crystalline silicon (100) by DC reactive sputtering, i.e., deposition of Nb in the presence of reactive N2 gas. After several runs, samples were prepared with Ar:N2 partial gas ratios of 90:10, 80:20 and 70:30 for a deposition time of 10 minutes. The...
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