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Downsizing the Cu signal traces in the redistribution layer is an effective approach to increasing the number of signal I/O lines and thereby greatly increasing signal processing performance between logic and memory chips in advanced fine-pitch packaging. Downsized Cu traces, however, are vulnerable to current stress, which degrades electromigration resistance. This is a serious problem in advanced...
A fully integrated 24.5/35-GHz dual-band T/R/Calibration switch module with Q-enhanced filtering function for a concurrent dual-band phased array system is presented. The proposed T/R/Calibration switch module offers internal calibration function with a quasi-elliptic dual-bandpass filtering which is enabled by a Q-enhanced metamaterial transmission line structure. This switch module architecture...
This paper reports on a large-size CPU package for UNIX servers which employs embedded thin film capacitor layers. The substrate of this package has two thin film capacitor layers in the surface of the core layer, which has a capacitance of 25 uF in total. In order to adopt this package substrate, we confirmed the effect of the thin film capacitor layers on the package assembly process. We actually...
An overview on the recent progress of Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs as key components in today's power electronic system is given. The state-of-the-art device concepts are explained as well as an outlook about ongoing and foreseeable development steps are shown.
We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si-FWD more than 60 percent.
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