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A novel quadratic buck-boost DC/DC converter is presented in this study. The proposed converter utilizes only one active switch and can step-up/down the input voltage, while the existing single switch quadratic buck/boost converters can only work in step-up or step-down mode. First, the proposed converter is analyzed in steady-state. Then, its performance is validated using simulations in MATLAB/Simulink...
We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs. The proposed gate driver uses an inductor as a current source during switching transient. Compared with a conventional gate driver, the proposed gate driver reduces switching time ioff and ion by 20% and 32% respectively.
The properties of SiC Power Mosfet transistors have been known for years and have been extensively described in the literature. Also, new generations of SiC transistors and diodes are being developed. Power Mosfet transistors are mainly used in power electronics applications in which such transistors operate as controlled switches. In this case, equipment design engineers focus their attention on...
In the LLC resonant converter, the transformer core is usually gapped to realize the designed value of magnetizing inductance that allows for soft switching. The air gap length which is in a scale of millimeters may be affected by the humidity and long working hours of the ferrite material, resulting into a variation of the core permeability. Moreover, a slight variation of the transformer core permeability...
A circuit topology and its control for a bi-directional isolated series resonant converter (SRC) are proposed. In general SRCs, when the output voltage is decreased, the turn-off current and the switching frequency are increased and efficiency is decreased due to the increase of switching loss. MOSFETs are therefore mainly used, as MOSFETs have a lower turn-off loss than IGBTs. In the present study,...
The benefits of emerging wide-band gap semiconductors can only be utilized if the semiconductor is properly packaged. Capacitive coupling in the package causes electromagnetic interference during high dv/dt switching. This paper investigates the current flowing in the parasitic capacitance between the output node and the grounded heat sink for a custom silicon carbide power module. A circuit model...
The implementation of 15 kV Silicon Carbide (SiC) MOSFETs in a three-phase, three-level active power filter of 100 kVA for a 10 kVAC grid and their challenges is shown. Due to the high switching frequency of 16 kHz, respectively 32 kHz ripple frequency, it will perfectly suited for active filtering of harmonics in the medium voltage grid.
The effect of humidity on SiC Power MOSFET modules is investigated in an industrial application. Four modules are operated outdoor and four modules are operated indoor in identical setups, while their breakdown voltages are monitored regularly. The evolution of the leakage current, indicating humidity-induced degradation is observed.
This paper presents a concept for a compact high voltage generator based on a highly integrated power chain switching at frequencies above 500 kHz. The high frequency operation in combination with the high integration approach enable a reduction of volume and weight of HY-generators used in industrial or medical applications.
In this paper, a novel bridgeless Flyback power factor correction rectifier is presented. Two active power switches, rather than the line-voltage diode bridge, are used to provide the bidirectional power flow. In comparison with the existing Flyback rectifiers, the proposed topology uses less number of transformer windings which simplifies the complexity of implementation in terms of magnetic utilization...
MOSFET devices have a body diode that allows reverse conduction, additionally, when a negative drain-source voltage is present, the MOSFET channel conduction can also be controlled by applying a gate-source voltage above the threshold voltage level. In a three phase inverter this results in parallel conduction of the diode and MOSFET when voltage and current differ in sign. This paper analyzes the...
Silicon carbide semiconductors offer high switching frequencies for high voltage application which reduces the filter size. The main drawback of high current applications are high turn-on losses. Within this paper an inverter is proposed which uses a quasi-resonant triangular current mode where the MOSFETs are turned on at zero current.
Wide bandgap (WBG) power electronic devices realized using silicon carbide(SiC) and gallium nitride (GaN) are increasingly replacing their silicon(Si) counterparts in power electronics applications. The obvious advantages of these devices with their higher switching speeds, lower on state resistance and high temperature operation over Si devices have aided in the paradigm shift towards wide bandgap...
Single and multi-voids position effects will be highlighted from an electrothermal viewpoint. Complementary numerical investigations will show that these effects are strongly dependent on the properties of the backside metallization of the MOSFET chip. The methodology based on a coupled analysis of electrothermal modeling and experiments that led to these conclusions will be detailed.
The Self Turn-ON influences the turn-ON and short-circuit behaviour of the IGBT. This is a positive feedback by the IGBT on itself and increases its turn-ON speed. The strength of the effect depends on the gate structure's design. Therefore, IGBTs with different gate structures are investigated with TCAD simulations. Additionally, its influence during Fault under Load is investigated.
This paper analyzes the design and construction of a SiC-based Dual Active Bridge (DAB) converter for its use in a three-stage Power Electronic Transformer (PET) based on a Modular Multilevel Converter (MMC). The galvanic isolation between primary and secondary of the PET provided by the DAB High Frequency Transformer (HFT) is 24 kV. Challenges for the HFT design are discussed. A 5 kW DAB prototype...
This paper investigates the switching performance of a 1.2 kV half-bridge SiC MOSFET module from Sanrex. Unlike in a standard SiC MOSFET module, where the MOSFET and the anti-parallel diode chips are fabricated separately, in the chosen MOSFET module (FCA150XB120), both the MOSFET and the diode are fabricated on a single chip. The device is characterized under both hard and soft switching conditions...
High-density packaging of fast-switching power semiconductors typically requires low parasitic inductance, high heat extraction, and high thermo-mechanical reliability. High-density packaging of high-voltage power semiconductors, such as 10 kV SiC MOSFETs, also requires low electric field concentration in order to prevent premature dielectric breakdown. Consequently, in addition to the usual electromagnetic,...
This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based three-phase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the size of the line filter (generally reactive components) will be reduced. However, to achieve high efficiency...
In the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper. The diamond substrate is associated with silicon MOSFETs in a power switching cell, showing promising switching characteristics. However, even if these diodes show a high current density, the effective total current...
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