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Two-dimensional transition metal dichalcogenides (TMD's) are promising materials for CMOS application[1], [2] due to their ultra-thin channel with excellent electrostatic control. TMD's are especially well suited for Tunneling Field-Effect Transistors (TFETs) due to their low dielectric constant and their promise of atomically sharp and self-passivated interfaces[3]-[5]. Here we experimentally demonstrate...
This study describes the fabrication of hybrid SAM/HfOx gate dielectrics by the radical oxidation in molybdenum disulfide (MoS2)field-effect transistors (FETs). The fabrication process involves the radical oxidation to form HfOx at the surface of metallic HfN, SAM formation by immersion, and deterministic transfer of MoS2 flakes. A subthreshold slope (SS) of 75 mV/dec and small hysteresis were demonstrated...
The hysteresis in the gate transfer characteristics of transistors made of two-dimensional materials is one of the most obvious problems of this novel technology. Here we attempt for the first time to develop a physical modeling approach for describing this hysteresis in devices based on two-dimensional materials. Our model is based on a drift-diffusion TCAD simulation coupled to a previously established...
Device modelling is a key enabling capability for the semiconductor industry, especially for process optimisation, and for insight into the physics of novel architectures and materials that are difficult to access experimentally. Despite much innovative experimental work, device modelling capabilities for field effect devices based on Transition Metal Dichalcogenide (TMD) channel materials are at...
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